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Article: Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations

TitleElectrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
Authors
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 5 How to Cite?
AbstractElectrical properties of HfTiON gate-dielectric metal-oxide-semiconductor (MOS) capacitors with different Si-surface nitridations in N2 O, NO, and N H3 prior to high- k film deposition are investigated and compared. It is found that the NO-nitrided sample exhibits low interface-state density and gate leakage current, and high reliability. This is attributed to formation of a SiON interlayer with suitable proportions of N and O. The MOS capacitor with Hf0.4 Ti0.6 Ox Ny SiON gate dielectric stack (capacitance equivalent thickness of 1.52 nm and k value of 18.9) prepared by NO surface nitridation has an interface-state density of 1.22× 1011 cm-2 eV-1 and gate leakage current density of 6× 10-4 A cm-2 (Vg =1 V). Moreover, only a small degradation of electrical properties after a stressing at 10 MVcm for 3000 s is observed for the NO-nitrided sample. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57493
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorJi, Fen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorGuan, JGen_HK
dc.date.accessioned2010-04-12T01:37:57Z-
dc.date.available2010-04-12T01:37:57Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 5en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57493-
dc.description.abstractElectrical properties of HfTiON gate-dielectric metal-oxide-semiconductor (MOS) capacitors with different Si-surface nitridations in N2 O, NO, and N H3 prior to high- k film deposition are investigated and compared. It is found that the NO-nitrided sample exhibits low interface-state density and gate leakage current, and high reliability. This is attributed to formation of a SiON interlayer with suitable proportions of N and O. The MOS capacitor with Hf0.4 Ti0.6 Ox Ny SiON gate dielectric stack (capacitance equivalent thickness of 1.52 nm and k value of 18.9) prepared by NO surface nitridation has an interface-state density of 1.22× 1011 cm-2 eV-1 and gate leakage current density of 6× 10-4 A cm-2 (Vg =1 V). Moreover, only a small degradation of electrical properties after a stressing at 10 MVcm for 3000 s is observed for the NO-nitrided sample. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleElectrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridationsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=91&issue=5&spage=052902&epage=1 &date=2007&atitle=Electrical+properties+of+HfTiON+gate-dielectric+metal-oxide-semiconductor+capacitors+with+different+Si-surface+nitridationsen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2767177en_HK
dc.identifier.scopuseid_2-s2.0-34547689087en_HK
dc.identifier.hkuros150302-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34547689087&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue5en_HK
dc.identifier.isiWOS:000248595800075-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJi, F=8238553900en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridGuan, JG=7201449685en_HK

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