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Article: Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations

TitleElectrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
Authors
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 5, article no. 052902 How to Cite?
AbstractElectrical properties of HfTiON gate-dielectric metal-oxide-semiconductor (MOS) capacitors with different Si-surface nitridations in N2 O, NO, and N H3 prior to high- k film deposition are investigated and compared. It is found that the NO-nitrided sample exhibits low interface-state density and gate leakage current, and high reliability. This is attributed to formation of a SiON interlayer with suitable proportions of N and O. The MOS capacitor with Hf0.4 Ti0.6 Ox Ny SiON gate dielectric stack (capacitance equivalent thickness of 1.52 nm and k value of 18.9) prepared by NO surface nitridation has an interface-state density of 1.22× 1011 cm-2 eV-1 and gate leakage current density of 6× 10-4 A cm-2 (Vg =1 V). Moreover, only a small degradation of electrical properties after a stressing at 10 MVcm for 3000 s is observed for the NO-nitrided sample. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57493
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorJi, Fen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorGuan, JGen_HK
dc.date.accessioned2010-04-12T01:37:57Z-
dc.date.available2010-04-12T01:37:57Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 5, article no. 052902-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57493-
dc.description.abstractElectrical properties of HfTiON gate-dielectric metal-oxide-semiconductor (MOS) capacitors with different Si-surface nitridations in N2 O, NO, and N H3 prior to high- k film deposition are investigated and compared. It is found that the NO-nitrided sample exhibits low interface-state density and gate leakage current, and high reliability. This is attributed to formation of a SiON interlayer with suitable proportions of N and O. The MOS capacitor with Hf0.4 Ti0.6 Ox Ny SiON gate dielectric stack (capacitance equivalent thickness of 1.52 nm and k value of 18.9) prepared by NO surface nitridation has an interface-state density of 1.22× 1011 cm-2 eV-1 and gate leakage current density of 6× 10-4 A cm-2 (Vg =1 V). Moreover, only a small degradation of electrical properties after a stressing at 10 MVcm for 3000 s is observed for the NO-nitrided sample. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 91 n. 5, article no. 052902 and may be found at https://doi.org/10.1063/1.2767177-
dc.subjectPhysics engineeringen_HK
dc.titleElectrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridationsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=91&issue=5&spage=052902&epage=1 &date=2007&atitle=Electrical+properties+of+HfTiON+gate-dielectric+metal-oxide-semiconductor+capacitors+with+different+Si-surface+nitridationsen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2767177en_HK
dc.identifier.scopuseid_2-s2.0-34547689087en_HK
dc.identifier.hkuros150302-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34547689087&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue5en_HK
dc.identifier.spagearticle no. 052902-
dc.identifier.epagearticle no. 052902-
dc.identifier.isiWOS:000248595800075-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJi, F=8238553900en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridGuan, JG=7201449685en_HK

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