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Article: Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack

TitleEffect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
Authors
KeywordsCoulomb scattering
High-k dielectric
Interface roughness scattering
MOSFET
SiGe
Issue Date2007
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp
Citation
Chinese Physics, 2007, v. 16 n. 12, p. 3820-3826 How to Cite?
AbstractA physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer (SiO 2) thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping a low equivalent oxide thickness. Simulated results agree reasonably with experimental data. © 2007 Chin. Phys. Soc. and IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155424
ISSN
2009 Impact Factor: 1.343
2010 SCImago Journal Rankings: 0.360
References

 

DC FieldValueLanguage
dc.contributor.authorZhang, XFen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorGuan, JGen_HK
dc.date.accessioned2012-08-08T08:33:25Z-
dc.date.available2012-08-08T08:33:25Z-
dc.date.issued2007en_HK
dc.identifier.citationChinese Physics, 2007, v. 16 n. 12, p. 3820-3826en_HK
dc.identifier.issn1009-1963en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155424-
dc.description.abstractA physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer (SiO 2) thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping a low equivalent oxide thickness. Simulated results agree reasonably with experimental data. © 2007 Chin. Phys. Soc. and IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cpen_HK
dc.relation.ispartofChinese Physicsen_HK
dc.subjectCoulomb scatteringen_HK
dc.subjectHigh-k dielectricen_HK
dc.subjectInterface roughness scatteringen_HK
dc.subjectMOSFETen_HK
dc.subjectSiGeen_HK
dc.titleEffect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stacken_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/1009-1963/16/12/044en_HK
dc.identifier.scopuseid_2-s2.0-37549060323en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-37549060323&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue12en_HK
dc.identifier.spage3820en_HK
dc.identifier.epage3826en_HK
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridZhang, XF=14627948200en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridGuan, JG=7201449685en_HK
dc.identifier.citeulike2164423-

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