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Article: The effects of duty cycle and voltage swing of gate pulse on the AC-stress-induced degradation of nMOSFETs with N2O gate oxides

TitleThe effects of duty cycle and voltage swing of gate pulse on the AC-stress-induced degradation of nMOSFETs with N2O gate oxides
Authors
Zeng, XLai, PTXu, JP
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 1998, v. 38 n. 12, p. 1925-1929 How to Cite?
DOI: http://dx.doi.org/10.1016/S0026-2714(98)00063-8
AbstractAC-stress-induced degradation in metal-oxide-semiconductor field-effect transistor (MOSFET) with N2O-grown and N2O-nitrided gate oxides was investigated, with emphasis on the duty cycle and voltage swing of the gate pulse. It is demonstrated that N2O-oxide devices show a weaker duty-cycle dependence than thermal-oxide devices, with N2O-nitrided oxide superior to N2O-grown oxide. More significantly, opposite frequency dependence of the VT shift is found between gate-pulse swings of 0-1/2 VD and 0-VD. The reasons are likely due to charge trapping and neutral-trap creation in the gate oxide. © 1998 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155089
ISSN
0026-2714
2023 Impact Factor: 1.6
2023 SCImago Journal Rankings: 0.394
ISI Accession Number ID
WOS:000077873600016
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZeng, Xen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.date.accessioned2012-08-08T08:31:49Z-
dc.date.available2012-08-08T08:31:49Z-
dc.date.issued1998en_HK
dc.identifier.citationMicroelectronics Reliability, 1998, v. 38 n. 12, p. 1925-1929en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155089-
dc.description.abstractAC-stress-induced degradation in metal-oxide-semiconductor field-effect transistor (MOSFET) with N2O-grown and N2O-nitrided gate oxides was investigated, with emphasis on the duty cycle and voltage swing of the gate pulse. It is demonstrated that N2O-oxide devices show a weaker duty-cycle dependence than thermal-oxide devices, with N2O-nitrided oxide superior to N2O-grown oxide. More significantly, opposite frequency dependence of the VT shift is found between gate-pulse swings of 0-1/2 VD and 0-VD. The reasons are likely due to charge trapping and neutral-trap creation in the gate oxide. © 1998 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleThe effects of duty cycle and voltage swing of gate pulse on the AC-stress-induced degradation of nMOSFETs with N2O gate oxidesen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0026-2714(98)00063-8-
dc.identifier.scopuseid_2-s2.0-0032308504en_HK
dc.identifier.hkuros44781-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032308504&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume38en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1925en_HK
dc.identifier.epage1929en_HK
dc.identifier.isiWOS:000077873600016-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridZeng, X=7403248314en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.issnl0026-2714-

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