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Article: Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's

TitleDynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's
Authors
Keywords1/f noise
AC hot-carrier stress
Dynamic stress
MOSFET’s
Issue Date2000
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2000, v. 47 n. 1, p. 109-112 How to Cite?
AbstractAC-stress-induced degradation of 1/f noise is investigated for n-MOSFET's with thermal oxide or nitrided oxide as gate dielectric, and the physical mechanisms involved are analyzed. It is found that the degradation of 1/f noise under ac stress is far more serious than that under dc stress. For an ac stress of VG = 0 approx. 0.5 VD, generations of both interface state (ΔDit) and neutral electron traps (ΔNet) are responsible for the increase of 1/f noise, with the former being dominant. For another ac stress of VG = 0 approx. VD, a large increase of 1/f noise is observed for the thermal-oxide device, and is attributed to enhanced ΔNet and generation of another specie of electron traps, plus a small amount of ΔDit. Moreover, under the two types of ac stress conditions, much smaller degradation of 1/f noise is observed for the nitrided device due to considerably improved oxide/Si interface and near-interface oxide qualities associated with interfacial nitrogen incorporation.
Persistent Identifierhttp://hdl.handle.net/10722/42852
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-03-23T04:33:25Z-
dc.date.available2007-03-23T04:33:25Z-
dc.date.issued2000en_HK
dc.identifier.citationIEEE Transactions on Electron Devices, 2000, v. 47 n. 1, p. 109-112en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42852-
dc.description.abstractAC-stress-induced degradation of 1/f noise is investigated for n-MOSFET's with thermal oxide or nitrided oxide as gate dielectric, and the physical mechanisms involved are analyzed. It is found that the degradation of 1/f noise under ac stress is far more serious than that under dc stress. For an ac stress of VG = 0 approx. 0.5 VD, generations of both interface state (ΔDit) and neutral electron traps (ΔNet) are responsible for the increase of 1/f noise, with the former being dominant. For another ac stress of VG = 0 approx. VD, a large increase of 1/f noise is observed for the thermal-oxide device, and is attributed to enhanced ΔNet and generation of another specie of electron traps, plus a small amount of ΔDit. Moreover, under the two types of ac stress conditions, much smaller degradation of 1/f noise is observed for the nitrided device due to considerably improved oxide/Si interface and near-interface oxide qualities associated with interfacial nitrogen incorporation.en_HK
dc.format.extent100043 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rights©2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsNitridation-
dc.subject1/f noise-
dc.subjectAC hot-carrier stress-
dc.subjectDynamic stress-
dc.subjectMOSFET’s-
dc.titleDynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET'sen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=47&issue=1&spage=109&epage=112&date=2000&atitle=Dynamic-stress-induced+enhanced+degradation+of+1/f+noise+in+n-MOSFET%27sen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/16.817575en_HK
dc.identifier.scopuseid_2-s2.0-0033907608en_HK
dc.identifier.hkuros54595-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33747094150&selection=ref&src=s&origin=recordpage-
dc.identifier.volume47en_HK
dc.identifier.issue1en_HK
dc.identifier.spage109en_HK
dc.identifier.epage112en_HK
dc.identifier.isiWOS:000084717800015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK
dc.customcontrol.immutablejt 130319-

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