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Article: Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Title | Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer |
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Authors | |
Keywords | Capacitance-voltage characteristics HfTiON Interlayer Leakage current Metal-oxide-semiconductor capacitors |
Issue Date | 2006 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp |
Citation | Chinese Physics, 2006, v. 15 n. 8, p. 1879-1882 How to Cite? |
Abstract | The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O 2 ambience, followed by an annealing in different gas ambiences of N 2, NO and NH 3 at 600°C for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared. The results indicate that the NO-annealed sample exhibits the lowest interface-state and dielectric-charge densities and best device reliability. This is attributed to the fact that nitridation can create strong Si≡≡N bonds to passivate dangling Si bonds and replace strained Si-O bonds, thus the sample forms a hardened dielectric/Si interface with high reliability. © 2006 Chin. Phys. Soc. and IOP Publishing Ltd. |
Persistent Identifier | http://hdl.handle.net/10722/155333 |
ISSN | |
References |
DC Field | Value | Language |
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dc.contributor.author | Chen, WB | en_HK |
dc.contributor.author | Xu, JP | en_HK |
dc.contributor.author | Lai, PT | en_HK |
dc.contributor.author | Li, YP | en_HK |
dc.contributor.author | Xu, SG | en_HK |
dc.contributor.author | Chan, CL | en_HK |
dc.date.accessioned | 2012-08-08T08:32:56Z | - |
dc.date.available | 2012-08-08T08:32:56Z | - |
dc.date.issued | 2006 | en_HK |
dc.identifier.citation | Chinese Physics, 2006, v. 15 n. 8, p. 1879-1882 | en_HK |
dc.identifier.issn | 1009-1963 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/155333 | - |
dc.description.abstract | The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O 2 ambience, followed by an annealing in different gas ambiences of N 2, NO and NH 3 at 600°C for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared. The results indicate that the NO-annealed sample exhibits the lowest interface-state and dielectric-charge densities and best device reliability. This is attributed to the fact that nitridation can create strong Si≡≡N bonds to passivate dangling Si bonds and replace strained Si-O bonds, thus the sample forms a hardened dielectric/Si interface with high reliability. © 2006 Chin. Phys. Soc. and IOP Publishing Ltd. | en_HK |
dc.language | eng | en_US |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp | en_HK |
dc.relation.ispartof | Chinese Physics | en_HK |
dc.subject | Capacitance-voltage characteristics | en_HK |
dc.subject | HfTiON | en_HK |
dc.subject | Interlayer | en_HK |
dc.subject | Leakage current | en_HK |
dc.subject | Metal-oxide-semiconductor capacitors | en_HK |
dc.title | Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Xu, JP: jpxu@eee.hku.hk | en_HK |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_HK |
dc.identifier.authority | Xu, JP=rp00197 | en_HK |
dc.identifier.authority | Lai, PT=rp00130 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1088/1009-1963/15/8/041 | en_HK |
dc.identifier.scopus | eid_2-s2.0-33746590327 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-33746590327&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 15 | en_HK |
dc.identifier.issue | 8 | en_HK |
dc.identifier.spage | 1879 | en_HK |
dc.identifier.epage | 1882 | en_HK |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Chen, WB=15119171500 | en_HK |
dc.identifier.scopusauthorid | Xu, JP=7407004696 | en_HK |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
dc.identifier.scopusauthorid | Li, YP=8704252400 | en_HK |
dc.identifier.scopusauthorid | Xu, SG=14055300000 | en_HK |
dc.identifier.scopusauthorid | Chan, CL=14053668100 | en_HK |
dc.identifier.citeulike | 779936 | - |
dc.identifier.issnl | 1009-1963 | - |