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Article: Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer

TitleElectrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Authors
KeywordsCapacitance-voltage characteristics
HfTiON
Interlayer
Leakage current
Metal-oxide-semiconductor capacitors
Issue Date2006
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp
Citation
Chinese Physics, 2006, v. 15 n. 8, p. 1879-1882 How to Cite?
AbstractThe paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O 2 ambience, followed by an annealing in different gas ambiences of N 2, NO and NH 3 at 600°C for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared. The results indicate that the NO-annealed sample exhibits the lowest interface-state and dielectric-charge densities and best device reliability. This is attributed to the fact that nitridation can create strong Si≡≡N bonds to passivate dangling Si bonds and replace strained Si-O bonds, thus the sample forms a hardened dielectric/Si interface with high reliability. © 2006 Chin. Phys. Soc. and IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155333
ISSN
2009 Impact Factor: 1.343
2010 SCImago Journal Rankings: 0.360
References

 

DC FieldValueLanguage
dc.contributor.authorChen, WBen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, YPen_HK
dc.contributor.authorXu, SGen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2012-08-08T08:32:56Z-
dc.date.available2012-08-08T08:32:56Z-
dc.date.issued2006en_HK
dc.identifier.citationChinese Physics, 2006, v. 15 n. 8, p. 1879-1882en_HK
dc.identifier.issn1009-1963en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155333-
dc.description.abstractThe paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O 2 ambience, followed by an annealing in different gas ambiences of N 2, NO and NH 3 at 600°C for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared. The results indicate that the NO-annealed sample exhibits the lowest interface-state and dielectric-charge densities and best device reliability. This is attributed to the fact that nitridation can create strong Si≡≡N bonds to passivate dangling Si bonds and replace strained Si-O bonds, thus the sample forms a hardened dielectric/Si interface with high reliability. © 2006 Chin. Phys. Soc. and IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cpen_HK
dc.relation.ispartofChinese Physicsen_HK
dc.subjectCapacitance-voltage characteristicsen_HK
dc.subjectHfTiONen_HK
dc.subjectInterlayeren_HK
dc.subjectLeakage currenten_HK
dc.subjectMetal-oxide-semiconductor capacitorsen_HK
dc.titleElectrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayeren_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/1009-1963/15/8/041en_HK
dc.identifier.scopuseid_2-s2.0-33746590327en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33746590327&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume15en_HK
dc.identifier.issue8en_HK
dc.identifier.spage1879en_HK
dc.identifier.epage1882en_HK
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, WB=15119171500en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, YP=8704252400en_HK
dc.identifier.scopusauthoridXu, SG=14055300000en_HK
dc.identifier.scopusauthoridChan, CL=14053668100en_HK
dc.identifier.citeulike779936-

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