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Article: Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient

TitleElectrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient
Authors
KeywordsGermanium
High-k gate dielectric
Lanthanide oxide
Metal-oxide-semiconductor
Post-deposition annealing
Issue Date2010
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2010, v. 518 n. 23, p. 6962-6965 How to Cite?
AbstractGe metal-oxide-semiconductor capacitors with La 2O 3 as gate dielectric are fabricated by e-beam evaporation of La 2O 3 followed by post-deposition annealing in different gases (NH 3, N 2, NO, N 2O and O 2). Experimental results indicate that the NH 3, NO, N 2O and O 2 anneals give higher interface-state and oxide-charge densities, and thus larger gate leakage current, with the highest for the O 2 anneal due to the growth of an unstable GeO x interlayer. On the other hand, the NH 3 annealing improves the k value of the dielectric, while the annealings in O 2-containing ambients (NO, N 2O and O 2) lead to the formation of a low-k GeO x interlayer, thus decreasing the equivalent k value. Compared with the above four samples, the sample annealed in N 2 exhibits not only larger k value (18.3) and smaller capacitance equivalent thickness (2.14 nm), but also lower leakage current density AR (∼ 10 -3 Acm - 2 at V g = 1 V) and smaller interface-state density AR (4.5 × 10 11 eV - 1 cm - 2). © 2010 Elsevier B.V.
Persistent Identifierhttp://hdl.handle.net/10722/155583
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 713308E
National Natural Science Foundation of China60776016
University of Hong Kong00600009
Funding Information:

This work is financially supported by the RGC of HKSAR, China (Project No. HKU 713308E), the National Natural Science Foundation of China (Grant no. 60776016), and the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong.

References
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DC FieldValueLanguage
dc.contributor.authorXu, HXen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2012-08-08T08:34:12Z-
dc.date.available2012-08-08T08:34:12Z-
dc.date.issued2010en_HK
dc.identifier.citationThin Solid Films, 2010, v. 518 n. 23, p. 6962-6965en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155583-
dc.description.abstractGe metal-oxide-semiconductor capacitors with La 2O 3 as gate dielectric are fabricated by e-beam evaporation of La 2O 3 followed by post-deposition annealing in different gases (NH 3, N 2, NO, N 2O and O 2). Experimental results indicate that the NH 3, NO, N 2O and O 2 anneals give higher interface-state and oxide-charge densities, and thus larger gate leakage current, with the highest for the O 2 anneal due to the growth of an unstable GeO x interlayer. On the other hand, the NH 3 annealing improves the k value of the dielectric, while the annealings in O 2-containing ambients (NO, N 2O and O 2) lead to the formation of a low-k GeO x interlayer, thus decreasing the equivalent k value. Compared with the above four samples, the sample annealed in N 2 exhibits not only larger k value (18.3) and smaller capacitance equivalent thickness (2.14 nm), but also lower leakage current density AR (∼ 10 -3 Acm - 2 at V g = 1 V) and smaller interface-state density AR (4.5 × 10 11 eV - 1 cm - 2). © 2010 Elsevier B.V.en_HK
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectGermaniumen_HK
dc.subjectHigh-k gate dielectricen_HK
dc.subjectLanthanide oxideen_HK
dc.subjectMetal-oxide-semiconductoren_HK
dc.subjectPost-deposition annealingen_HK
dc.titleElectrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambienten_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.tsf.2010.07.030en_HK
dc.identifier.scopuseid_2-s2.0-77956229339en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77956229339&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume518en_HK
dc.identifier.issue23en_HK
dc.identifier.spage6962en_HK
dc.identifier.epage6965en_HK
dc.identifier.isiWOS:000282534000042-
dc.publisher.placeSwitzerlanden_HK
dc.relation.projectHigh-k Gate Dielectrics for High-Performance Germanium MISFET's-
dc.identifier.scopusauthoridXu, HX=25639287800en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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