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Article: Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses

TitleEnergy levels of interface states generated in n-MOSFETs by hot-carrier stresses
Authors
Issue Date2000
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2000, v. 44 n. 3, p. 527-534 How to Cite?
AbstractThe energy levels of interface states generated in n-MOSFETs during hot-carrier stressings under maximum substrate-current condition (VG approx. VD/2) are studied by measuring their GIDL current, which is believed to result from trap-assisted tunneling. It is found that different VG results in interface-state distribution with different energy-level edges in the forbidden gap. This phenomenon gives a new insight on the mechanism of interface-state generation: the energy release when holes are neutralized by electrons during stressing, depends on the energy the carriers obtain from the stress field which is related to VG and VD. Smaller released energy prefers to break those bonds with lower binding energy (e.g. strained Si-O bonds) and thus creates shallow interface states and vice versa. Hence, the effects of these shallow interface states on device reliabilities are a major concern because they would be highly created by the low operating voltage of MOSFETs. In addition, it is suggested that interface traps which are most effective in assisted tunneling are those closest to the mid-gap from the analyses on the barrier height of tunneling.
Persistent Identifierhttp://hdl.handle.net/10722/155128
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:31:59Z-
dc.date.available2012-08-08T08:31:59Z-
dc.date.issued2000en_HK
dc.identifier.citationSolid-State Electronics, 2000, v. 44 n. 3, p. 527-534en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155128-
dc.description.abstractThe energy levels of interface states generated in n-MOSFETs during hot-carrier stressings under maximum substrate-current condition (VG approx. VD/2) are studied by measuring their GIDL current, which is believed to result from trap-assisted tunneling. It is found that different VG results in interface-state distribution with different energy-level edges in the forbidden gap. This phenomenon gives a new insight on the mechanism of interface-state generation: the energy release when holes are neutralized by electrons during stressing, depends on the energy the carriers obtain from the stress field which is related to VG and VD. Smaller released energy prefers to break those bonds with lower binding energy (e.g. strained Si-O bonds) and thus creates shallow interface states and vice versa. Hence, the effects of these shallow interface states on device reliabilities are a major concern because they would be highly created by the low operating voltage of MOSFETs. In addition, it is suggested that interface traps which are most effective in assisted tunneling are those closest to the mid-gap from the analyses on the barrier height of tunneling.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.titleEnergy levels of interface states generated in n-MOSFETs by hot-carrier stressesen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1101(99)00257-9en_HK
dc.identifier.scopuseid_2-s2.0-0034159714en_HK
dc.identifier.hkuros54589-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034159714&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume44en_HK
dc.identifier.issue3en_HK
dc.identifier.spage527en_HK
dc.identifier.epage534en_HK
dc.identifier.isiWOS:000085469300018-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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