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Article: Effects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors

TitleEffects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors
Authors
KeywordsInterface-state density
MOS capacitors
Silicon carbide
Wet N 2O oxidation
Issue Date2002
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 2002, v. 23 n. 7, p. 410-412 How to Cite?
AbstractOxynitrides were grown on n- and p-type 6H-SiC by wet N 2O oxidation (bubbling N 2O gas through deionized water at 95°C) or dry N 2O oxidation followed by wet N 2O oxidation. Their oxide/SiC interfaces were investigated for fresh and stressed devices. It was found that both processes improve p-SiC/oxide but deteriorate n-SiC/oxide interface properties when compared to dry N 2O oxidation alone. The involved mechanism could be enhanced removal of unwanted carbon compounds near the interface due to the wet ambient, and hence a reduction of donor-like interface states for the p-type devices. As for the n-type devices, incorporation of hydrogen-related species near the interface under the wet ambient increase acceptor-like interface states. In summary, the wet N 2O oxidation can be used for providing comparable reliability for n- and p-SiC MOS devices, and especially obtaining high-quality oxide-SiC interface in p-type MOS devices.
Persistent Identifierhttp://hdl.handle.net/10722/42917
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2007-03-23T04:34:40Z-
dc.date.available2007-03-23T04:34:40Z-
dc.date.issued2002en_HK
dc.identifier.citationIeee Electron Device Letters, 2002, v. 23 n. 7, p. 410-412en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42917-
dc.description.abstractOxynitrides were grown on n- and p-type 6H-SiC by wet N 2O oxidation (bubbling N 2O gas through deionized water at 95°C) or dry N 2O oxidation followed by wet N 2O oxidation. Their oxide/SiC interfaces were investigated for fresh and stressed devices. It was found that both processes improve p-SiC/oxide but deteriorate n-SiC/oxide interface properties when compared to dry N 2O oxidation alone. The involved mechanism could be enhanced removal of unwanted carbon compounds near the interface due to the wet ambient, and hence a reduction of donor-like interface states for the p-type devices. As for the n-type devices, incorporation of hydrogen-related species near the interface under the wet ambient increase acceptor-like interface states. In summary, the wet N 2O oxidation can be used for providing comparable reliability for n- and p-SiC MOS devices, and especially obtaining high-quality oxide-SiC interface in p-type MOS devices.en_HK
dc.format.extent184778 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectInterface-state densityen_HK
dc.subjectMOS capacitorsen_HK
dc.subjectSilicon carbideen_HK
dc.subjectWet N 2O oxidationen_HK
dc.titleEffects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=23&issue=7&spage=410&epage=412&date=2002&atitle=Effects+of+wet+N2O+oxidation+on+interface+properties+of+6H-SiC+MOS+capacitorsen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/LED.2002.1015220en_HK
dc.identifier.scopuseid_2-s2.0-0036646896en_HK
dc.identifier.hkuros80471-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036646896&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue7en_HK
dc.identifier.spage410en_HK
dc.identifier.epage412en_HK
dc.identifier.isiWOS:000176491000012-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK

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