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Article: Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment

TitleElectrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Authors
KeywordsHfO2
High-k gate dielectric
Interlayer
MOS capacitors
Surface treatment
Issue Date2007
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp
Citation
Chinese Physics, 2007, v. 16 n. 2, p. 529-532 How to Cite?
AbstractTrichloroethylene (TCE) pretreatment of Si surface prior to HfO 2 deposition is employed to fabricate HfO 2 gate-dielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO 2/Si interface properties, gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH 3, NO, N 2O and TCE ambients, the TCE pretreatment gives the least interlayer growth, the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl 2 and HCl on the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric. © 2007 Chin. Phys. Soc. and IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155372
ISSN
2009 Impact Factor: 1.343
2010 SCImago Journal Rankings: 0.360
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorChen, WBen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, YPen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2012-08-08T08:33:07Z-
dc.date.available2012-08-08T08:33:07Z-
dc.date.issued2007en_HK
dc.identifier.citationChinese Physics, 2007, v. 16 n. 2, p. 529-532en_HK
dc.identifier.issn1009-1963en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155372-
dc.description.abstractTrichloroethylene (TCE) pretreatment of Si surface prior to HfO 2 deposition is employed to fabricate HfO 2 gate-dielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO 2/Si interface properties, gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH 3, NO, N 2O and TCE ambients, the TCE pretreatment gives the least interlayer growth, the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl 2 and HCl on the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric. © 2007 Chin. Phys. Soc. and IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cpen_HK
dc.relation.ispartofChinese Physicsen_HK
dc.subjectHfO2en_HK
dc.subjectHigh-k gate dielectricen_HK
dc.subjectInterlayeren_HK
dc.subjectMOS capacitorsen_HK
dc.subjectSurface treatmenten_HK
dc.titleElectrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatmenten_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/1009-1963/16/2/040en_HK
dc.identifier.scopuseid_2-s2.0-34249033745en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34249033745&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue2en_HK
dc.identifier.spage529en_HK
dc.identifier.epage532en_HK
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridChen, WB=15119171500en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, YP=8704252400en_HK
dc.identifier.scopusauthoridChan, CL=14053668100en_HK
dc.identifier.citeulike1073487-

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