Results 1 to 20 of 36
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TypeTitleAuthor(s)YearViews
Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theoryDai, XM; Xu, SJ; Ling, CC; Brauer, G; Anwand, W; Skorupa, W2012111
 
Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO filmFan, J; Zhu, C; Yang, B; Fung, S; Beling, CD; Brauer, G; Anwand, W; Grambole, D; Skorupa, W; Wong, KS; Zhong, YC; Xie, Z; Ling, CC2011211
 
Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystalDing, G; Ling, CC; Anwand, W; Brauer, G; Skorupa, W2010232
 
Deep-level defects study of arsenic-implanted ZnO single crystalZhu, CY; Ling, CC; Brauer, G; Anwand, W; Skorupa, W2009575
 
Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopyBrauer, G; Anwand, W; Grambole, D; Grenzer, J; Skorupa, W; Čížek, J; Kuriplach, J; Procházka, I; Ling, CC; So, CK; Schulz, D; Klimm, D2009725
 
Characterization of ZnO nanostructures: A challenge to positron annihilation spectroscopy and other methodsBrauer, G; Anwand, W; Grambole, D; Egger, W; Sperr, P; Beinik, I; Wang, L; Teichert, C; Kuriplach, J; Lang, J; Zviagin, S; Cizmar, E; Ling, CC; Hsu, YF; Xi, YY; Chen, X; Djurišić, AB; Skorupa, W2009632
 
Defects in zinc-implanted ZnO thin filmsSchmidt, M; Ellguth, M; Czekalla, C; V Wenckstern, H; Pickenhain, R; Grundmann, M; Brauer, G; Skorupa, W; Helm, M; Gu, Q; Ling, CC2009622
 
Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputteringFan, JC; Zhu, CY; Fung, S; Zhong, YC; Wong, KS; Xie, Z; Brauer, G; Anwand, W; Skorupa, W; To, CK; Yang, B; Beling, CD; Ling, CC2009766
 
Defect study in ZnO related structures-A multi-spectroscopic approachLing, CC; Cheung, CK; Gu, QL; Dai, XM; Xu, SJ; Zhu, CY; Luo, JM; Zhu, CY; Tam, KH; Djurišić, AB; Beling, CD; Fung, S; Lu, LW; Brauer, G; Anwand, W; Skorupa, W; Ong, HC2008541
 
Defects characterization in ZnO Schottky contact and homogeneous p-n junctionLing, FCC; Gu, Q; Zhu, C; Hsu, YF; Djurisic, A; Brauer, G; Anwand, W; Skorupa, W2008275
 
Deep level defect study of As-implanted ZnO p-n junctionZhu, C; Ling, FCC; Brauer, G; Anwand, W; Skorupa, W2008184
 
Vacancy-type defects in 6H-silicon carbide induced by He-implantation: A positron annihilation spectroscopy approachZhu, CY; Ling, CC; Brauer, G; Anwand, W; Skorupa, W2008607
 
Influence of electron irradiation on hydrothermally grown zinc oxide single crystalsLu, LW; So, CK; Zhu, CY; Gu, QL; Li, CJ; Fung, S; Brauer, G; Anwand, W; Skorupa, W; Ling, CC2008561
 
Defect study in zinc oxide related structures – Electrical and optical characterizationGu, Q; Ling, FCC; Cheung, CK; Dai, X; Xu, SJ; Tam, KH; Djurisic, A; Wang, RS; Ong, HC; Brauer, G; Anwand, W; Skorupa, W2008224
 
Non-destructive characterization of vertical ZnO nanorod arrays by slow positron implantation spectroscopy, atomic force microscopy, and photoluminescenceBrauer, G; Anwand, W; Skorupa, W; Beynik, I; Teichert, C; Hsu, YF; Xi, Y; Zhu, C; Ling, FCC; Djurisic, A2008255
 
Electrical characterization of N +-implanted n-type ZnO single crystals: p-n homojunction and deep level defectsGu, Q; Dai, X; Ling, CC; Xu, S; Lu, L; Brauer, G; Anwand, W; Skorupa, W200882
 
Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junctionGu, QL; Ling, CC; Brauer, G; Anwand, W; Skorupa, W; Hsu, YF; Djurišić, AB; Zhu, CY; Fung, S; Lu, LW2008659
 
Positron annihilation spectroscopic study of hydrothermal grown n-type zinc oxide single crystalHui, CW; Zhang, ZD; Zhou, TJ; Ling, CC; Beling, CD; Fung, S; Brauer, G; Anwand, W; Skorupa, W2007323
 
Non-destructive characterization of vertical ZnO nanowire arrays by slow positron implantation spectroscopy, atomic force microscopy, and nuclear reaction analysisBrauer, G; Anwand, W; Grambole, D; Skorupa, W; Hou, Y; Andreev, A; Teichert, C; Tam, KH; Djurišić, AB2007151
 
Influence of hydrogen peroxide treatment on Au/n-ZnO contactChen, XD; Gu, QL; Ling, CC; Brauer, G; Anwand, W; Skorupa, W; Reuther, H; Djurišić, AB2007258
 
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