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Article: Defect study in ZnO related structures-A multi-spectroscopic approach
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TitleDefect study in ZnO related structures-A multi-spectroscopic approach
 
AuthorsLing, CC1
Cheung, CK1
Gu, QL1
Dai, XM1
Xu, SJ1
Zhu, CY1
Luo, JM1
Zhu, CY1
Tam, KH1
Djurišić, AB1
Beling, CD1
Fung, S1
Lu, LW1
Brauer, G2
Anwand, W2
Skorupa, W2
Ong, HC3
 
KeywordsDLTS
Nanorod
PAS
PL
Schottky contact
XPS
ZnO
 
Issue Date2008
 
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
 
CitationApplied Surface Science, 2008, v. 255 n. 1, p. 58-62 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.apsusc.2008.05.309
 
AbstractZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure. © 2008 Elsevier B.V. All rights reserved.
 
ISSN0169-4332
2013 Impact Factor: 2.538
2013 SCImago Journal Rankings: 1.045
 
DOIhttp://dx.doi.org/10.1016/j.apsusc.2008.05.309
 
ISI Accession Number IDWOS:000259726900014
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLing, CC
 
dc.contributor.authorCheung, CK
 
dc.contributor.authorGu, QL
 
dc.contributor.authorDai, XM
 
dc.contributor.authorXu, SJ
 
dc.contributor.authorZhu, CY
 
dc.contributor.authorLuo, JM
 
dc.contributor.authorZhu, CY
 
dc.contributor.authorTam, KH
 
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorFung, S
 
dc.contributor.authorLu, LW
 
dc.contributor.authorBrauer, G
 
dc.contributor.authorAnwand, W
 
dc.contributor.authorSkorupa, W
 
dc.contributor.authorOng, HC
 
dc.date.accessioned2010-05-31T03:52:52Z
 
dc.date.available2010-05-31T03:52:52Z
 
dc.date.issued2008
 
dc.description.abstractZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure. © 2008 Elsevier B.V. All rights reserved.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationApplied Surface Science, 2008, v. 255 n. 1, p. 58-62 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.apsusc.2008.05.309
 
dc.identifier.doihttp://dx.doi.org/10.1016/j.apsusc.2008.05.309
 
dc.identifier.epage62
 
dc.identifier.hkuros153531
 
dc.identifier.isiWOS:000259726900014
 
dc.identifier.issn0169-4332
2013 Impact Factor: 2.538
2013 SCImago Journal Rankings: 1.045
 
dc.identifier.issue1
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-53049096067
 
dc.identifier.spage58
 
dc.identifier.urihttp://hdl.handle.net/10722/59564
 
dc.identifier.volume255
 
dc.languageeng
 
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
 
dc.publisher.placeNetherlands
 
dc.relation.ispartofApplied Surface Science
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Surface Science. Copyright © Elsevier BV.
 
dc.subjectDLTS
 
dc.subjectNanorod
 
dc.subjectPAS
 
dc.subjectPL
 
dc.subjectSchottky contact
 
dc.subjectXPS
 
dc.subjectZnO
 
dc.titleDefect study in ZnO related structures-A multi-spectroscopic approach
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Ling, CC</contributor.author>
<contributor.author>Cheung, CK</contributor.author>
<contributor.author>Gu, QL</contributor.author>
<contributor.author>Dai, XM</contributor.author>
<contributor.author>Xu, SJ</contributor.author>
<contributor.author>Zhu, CY</contributor.author>
<contributor.author>Luo, JM</contributor.author>
<contributor.author>Zhu, CY</contributor.author>
<contributor.author>Tam, KH</contributor.author>
<contributor.author>Djuri&#353;i&#263;, AB</contributor.author>
<contributor.author>Beling, CD</contributor.author>
<contributor.author>Fung, S</contributor.author>
<contributor.author>Lu, LW</contributor.author>
<contributor.author>Brauer, G</contributor.author>
<contributor.author>Anwand, W</contributor.author>
<contributor.author>Skorupa, W</contributor.author>
<contributor.author>Ong, HC</contributor.author>
<date.accessioned>2010-05-31T03:52:52Z</date.accessioned>
<date.available>2010-05-31T03:52:52Z</date.available>
<date.issued>2008</date.issued>
<identifier.citation>Applied Surface Science, 2008, v. 255 n. 1, p. 58-62</identifier.citation>
<identifier.issn>0169-4332</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/59564</identifier.uri>
<description.abstract>ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure. &#169; 2008 Elsevier B.V. All rights reserved.</description.abstract>
<language>eng</language>
<publisher>Elsevier BV. The Journal&apos;s web site is located at http://www.elsevier.com/locate/apsusc</publisher>
<relation.ispartof>Applied Surface Science</relation.ispartof>
<rights>Applied Surface Science. Copyright &#169; Elsevier BV.</rights>
<subject>DLTS</subject>
<subject>Nanorod</subject>
<subject>PAS</subject>
<subject>PL</subject>
<subject>Schottky contact</subject>
<subject>XPS</subject>
<subject>ZnO</subject>
<title>Defect study in ZnO related structures-A multi-spectroscopic approach</title>
<type>Article</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=0169-4332&amp;volume=255&amp;spage=58&amp;epage=62&amp;date=2008&amp;atitle=Defect+study+in+ZnO+related+structures&#8212;A+multi-spectroscopic+approach</identifier.openurl>
<description.nature>link_to_subscribed_fulltext</description.nature>
<identifier.doi>10.1016/j.apsusc.2008.05.309</identifier.doi>
<identifier.scopus>eid_2-s2.0-53049096067</identifier.scopus>
<identifier.hkuros>153531</identifier.hkuros>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-53049096067&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.volume>255</identifier.volume>
<identifier.issue>1</identifier.issue>
<identifier.spage>58</identifier.spage>
<identifier.epage>62</identifier.epage>
<identifier.isi>WOS:000259726900014</identifier.isi>
<publisher.place>Netherlands</publisher.place>
</item>
Author Affiliations
  1. The University of Hong Kong
  2. Forschungszentrum Dresden Rossendorf
  3. Chinese University of Hong Kong