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Article: Defect study in ZnO related structures-A multi-spectroscopic approach

TitleDefect study in ZnO related structures-A multi-spectroscopic approach
Authors
KeywordsDLTS
Nanorod
PAS
PL
Schottky contact
XPS
ZnO
Issue Date2008
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 2008, v. 255 n. 1, p. 58-62 How to Cite?
Abstract
ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure. © 2008 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/59564
ISSN
2013 Impact Factor: 2.538
2013 SCImago Journal Rankings: 1.045
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorCheung, CKen_HK
dc.contributor.authorGu, QLen_HK
dc.contributor.authorDai, XMen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorZhu, CYen_HK
dc.contributor.authorLuo, JMen_HK
dc.contributor.authorZhu, CYen_HK
dc.contributor.authorTam, KHen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLu, LWen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorOng, HCen_HK
dc.date.accessioned2010-05-31T03:52:52Z-
dc.date.available2010-05-31T03:52:52Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Surface Science, 2008, v. 255 n. 1, p. 58-62en_HK
dc.identifier.issn0169-4332en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59564-
dc.description.abstractZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure. © 2008 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_HK
dc.relation.ispartofApplied Surface Scienceen_HK
dc.rightsApplied Surface Science. Copyright © Elsevier BV.en_HK
dc.subjectDLTSen_HK
dc.subjectNanoroden_HK
dc.subjectPASen_HK
dc.subjectPLen_HK
dc.subjectSchottky contacten_HK
dc.subjectXPSen_HK
dc.subjectZnOen_HK
dc.titleDefect study in ZnO related structures-A multi-spectroscopic approachen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=255&spage=58&epage=62&date=2008&atitle=Defect+study+in+ZnO+related+structures—A+multi-spectroscopic+approachen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.apsusc.2008.05.309en_HK
dc.identifier.scopuseid_2-s2.0-53049096067en_HK
dc.identifier.hkuros153531en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-53049096067&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume255en_HK
dc.identifier.issue1en_HK
dc.identifier.spage58en_HK
dc.identifier.epage62en_HK
dc.identifier.isiWOS:000259726900014-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK
dc.identifier.scopusauthoridGu, QL=16067090400en_HK
dc.identifier.scopusauthoridDai, XM=25960763800en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridZhu, CY=14007977600en_HK
dc.identifier.scopusauthoridLuo, JM=24081000400en_HK
dc.identifier.scopusauthoridZhu, CY=54785629400en_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLu, LW=7403963183en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridOng, HC=7102298056en_HK

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