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Browsing by Author rp00197
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Showing results 87 to 106 of 109
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Title
Author(s)
Issue Date
Off-state gate current with quasi-zero temperature coefficient in n-MOSFETs with reoxidized nitrided oxide as gate dielectric
Journal:
Microelectronics Reliability
Lai, PT
Xu, JP
Lo, HB
Cheng, YC
1998
Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor
Proceeding/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Xu, HX
Xu, JP
Li, CX
Liu, L
Lai, PT
Chan, CL
2009
Parallel and collective analysis of cDNA expression pattern of inflamatory related factors
Proceeding/Conference:
Technical Digest of 2000 International Forum on Biochip Technologies
Zhou, WL
Yang, YZ
Zhu, KL
Huang, W
Xu, J
Yu, ZW
Lai, PT
Cheng, YC
2000
Pentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Deng, LF
Tang, WM
Leung, CH
Lai, PT
Xu, JP
Che, CM
2008
Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2 Charge-Trapping Layer by Using Nitrogen Incorporation
Journal:
Applied Physics Express
Chen, JX
Xu, J
Liu, L
Lai, PT
2013
A physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETs
Journal:
IEEE Transactions on Electron Devices
Zhang, XF
Xu, JP
Lai, PT
Li, CX
2007
Plasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric
Journal:
IEEE Transactions on Electron Devices
Wang, LS
Xu, J
Liu, L
Lu, H
Lai, PT
Tang, WM
2015
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients
Proceeding/Conference:
Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006
Lai, PT
Xu, JP
Li, CX
Zou, X
Chen, WB
2007
Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation
Journal:
Applied Physics Letters
Lai, PT
Xu, J
Lo, HB
Cheng, YC
1997
Sensing characteristics of a novel NH 3-nitrided schottky-diode hydrogen sensor
Proceeding/Conference:
IEEE International Symposium on Industrial Electronics
Tang, WM
Lai, PT
Xu, JP
Chan, CL
2004
Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H-SiC
Journal:
Solid-State Electronics
Xu, JP
Lai, PT
Chan, CL
2003
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Li, C
Wang, C
Leung, CH
Lai, PT
Xu, JP
2009
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Journal:
Microelectronic Engineering
Li, CX
Wang, CD
Leung, CH
Lai, PT
Xu, JP
2009
A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment
Journal:
Journal of Applied Physics
Lai, PT
Xu, JP
Lo, HB
Gheng, YC
1997
A study on the improved programming characteristics of flash memory with Si 3N 4/SiO 2 stacked tunneling dielectric
Journal:
Microelectronics Reliability
Liu, L
Xu, JP
Chen, LL
Lai, PT
2009
Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Journal:
Applied Physics Letters
Zou, X
Xu, JP
Li, CX
Lai, PT
2007
Suppression of hot-carrier-induced degradation in n-MOSFETS at low temperatures by N 2O-nitridation of gate oxide
Journal:
Solid-State Electronics
Lai, PT
Xu, JP
Huang, L
Lo, HB
Cheng, YC
1998
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Journal:
Microelectronics Reliability
Huang, MQ
Lai, PT
Xu, JP
Zeng, SH
Li, GQ
Cheng, YC
1998
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Proceeding/Conference:
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Huang, MQ
Lai, PT
Xu, JP
Zeng, SH
Li, GQ
Cheng, YC
1997
Temperature-controlled system of PCR chips
Journal:
Huazhong Ligong Daxue Xuebao/Journal Huazhong (Central China) University of Science and Technology
Xu, J
Lai, PT
Gan, X
Zhong, D
2001