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Article: Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor

TitleSuppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Authors
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 16 How to Cite?
AbstractThe effects of water vapor added in the N2 annealing of high-k HfTiON gate dielectric on Ge metal-oxide-semiconductor capacitor are investigated. Both transmission-electron microscopy and ellipsometry indicate that, as compared to dry-N2 annealing, the wet-N2 annealing can greatly suppress the growth of unstable low-k GeOx at the dielectric/Ge interface, thus resulting in smaller equivalent dielectric thickness, as well as less interface states and dielectric charges. All these are attributed to the hydrolyzable property of GeOx in water. Moreover, the wet-N2 annealed capacitor has ten times lower gate-leakage current due to its better dielectric morphology as confirmed by atomic force microscopy. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57474
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-04-12T01:37:34Z-
dc.date.available2010-04-12T01:37:34Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 16en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57474-
dc.description.abstractThe effects of water vapor added in the N2 annealing of high-k HfTiON gate dielectric on Ge metal-oxide-semiconductor capacitor are investigated. Both transmission-electron microscopy and ellipsometry indicate that, as compared to dry-N2 annealing, the wet-N2 annealing can greatly suppress the growth of unstable low-k GeOx at the dielectric/Ge interface, thus resulting in smaller equivalent dielectric thickness, as well as less interface states and dielectric charges. All these are attributed to the hydrolyzable property of GeOx in water. Moreover, the wet-N2 annealed capacitor has ten times lower gate-leakage current due to its better dielectric morphology as confirmed by atomic force microscopy. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleSuppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vaporen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=90&issue=16&spage=163502&epage=1 &date=2007&atitle=Suppressed+growth+of+unstable+low-k+GeOx+interlayer+in+Ge+metal-oxide-semiconductor+capacitor+with+high-k+gate+dielectric+by+annealing+in+water+vaporen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2723074en_HK
dc.identifier.scopuseid_2-s2.0-34247387617en_HK
dc.identifier.hkuros135374-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34247387617&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue16en_HK
dc.identifier.isiWOS:000245870400117-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZou, X=23020170400en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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