File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Off-state gate current with quasi-zero temperature coefficient in n-MOSFETs with reoxidized nitrided oxide as gate dielectric

TitleOff-state gate current with quasi-zero temperature coefficient in n-MOSFETs with reoxidized nitrided oxide as gate dielectric
Authors
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 1998, v. 38 n. 10, p. 1585-1589 How to Cite?
AbstractTemperature stability of off-state gate current (Ig) for n-MOSFET's with reoxidized nitrided oxide (RNO) as gate dielectrics prepared by rapid thermal processing is investigated. A significant phenomeon that Ig remains almost unchanged at elevated temperature is observed. This could be attributed to the fact that reoxidation recovers part of the nitridation-induced lowering of barrier height for hole emission at the RNO/Si interface, resulting in the increases of the hot-hole injection which nearly compensate the decrease of hole generation at elevated temperature in the avalanche regime. The finding reveals a useful behavior with temperature-insensitive off-state gate current for RNO devices requiring a thermally stable operation. © 1998 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155249
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLo, HBen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:32:32Z-
dc.date.available2012-08-08T08:32:32Z-
dc.date.issued1998en_HK
dc.identifier.citationMicroelectronics Reliability, 1998, v. 38 n. 10, p. 1585-1589en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155249-
dc.description.abstractTemperature stability of off-state gate current (Ig) for n-MOSFET's with reoxidized nitrided oxide (RNO) as gate dielectrics prepared by rapid thermal processing is investigated. A significant phenomeon that Ig remains almost unchanged at elevated temperature is observed. This could be attributed to the fact that reoxidation recovers part of the nitridation-induced lowering of barrier height for hole emission at the RNO/Si interface, resulting in the increases of the hot-hole injection which nearly compensate the decrease of hole generation at elevated temperature in the avalanche regime. The finding reveals a useful behavior with temperature-insensitive off-state gate current for RNO devices requiring a thermally stable operation. © 1998 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleOff-state gate current with quasi-zero temperature coefficient in n-MOSFETs with reoxidized nitrided oxide as gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-11544330580en_HK
dc.identifier.hkuros44778-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-11544330580&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume38en_HK
dc.identifier.issue10en_HK
dc.identifier.spage1585en_HK
dc.identifier.epage1589en_HK
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats