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Conference Paper: Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment

TitleSuppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Authors
Huang, MQLai, PTXu, JPZeng, SHLi, GQCheng, YC
Issue Date1997
Citation
Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 1997, p. 90-93 How to Cite?
AbstractLow-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step on the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behaviour was observed, indicating an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si/SiO2 interface induced by the backsurface bombardment.
Persistent Identifierhttp://hdl.handle.net/10722/158229

 

DC FieldValueLanguage
dc.contributor.authorHuang, MQen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorZeng, SHen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:58:38Z-
dc.date.available2012-08-08T08:58:38Z-
dc.date.issued1997en_HK
dc.identifier.citationProceedings Of The Ieee Hong Kong Electron Devices Meeting, 1997, p. 90-93en_US
dc.identifier.urihttp://hdl.handle.net/10722/158229-
dc.description.abstractLow-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step on the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behaviour was observed, indicating an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si/SiO2 interface induced by the backsurface bombardment.en_HK
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meetingen_HK
dc.titleSuppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardmenten_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031365741en_HK
dc.identifier.spage90en_HK
dc.identifier.epage93en_HK
dc.identifier.scopusauthoridHuang, MQ=7404259759en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridZeng, SH=7202412592en_HK
dc.identifier.scopusauthoridLi, GQ=7407050307en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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