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Article: Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H-SiC

TitleSteam-induced interface improvement of N2O-nitrided SiO2 grown on 6H-SiC
Authors
KeywordsInterface properties
MOS devices
N2O nitridation
Silicon carbide
SiO2
Issue Date2003
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2003, v. 47 n. 8, p. 1397-1400 How to Cite?
AbstractInterface quality and reliability of n- and p-type 6H-SiC MOS capacitors with dielectric prepared by wet N2O nitridation (bubbling N2O gas through de-ionized water at 95 °C) or dry N2O nitridation plus wet reoxidation were investigated. When compared with the conventional dry N2O nitridation, the two nitridation processes greatly reduce interface-state density and enhance reliability of both n- and p-SiC MOS devices. The involved physical mechanisms could be attributed to steam-enhanced out-diffusion of CO and removal of interstitial carbon as well as carbon clusters, steam-enhanced nitrogen passivation and steam-induced hydrogen passivation of dangling bonds and carbon-related traps at the interface. As a result, N2O nitridation with slight modification could still be a superior process for preparing high-quality gate dielectric of both n- and p-SiC MOS devices in the industry-preferred N2O environment. © 2003 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/74072
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2010-09-06T06:57:31Z-
dc.date.available2010-09-06T06:57:31Z-
dc.date.issued2003en_HK
dc.identifier.citationSolid-State Electronics, 2003, v. 47 n. 8, p. 1397-1400en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/74072-
dc.description.abstractInterface quality and reliability of n- and p-type 6H-SiC MOS capacitors with dielectric prepared by wet N2O nitridation (bubbling N2O gas through de-ionized water at 95 °C) or dry N2O nitridation plus wet reoxidation were investigated. When compared with the conventional dry N2O nitridation, the two nitridation processes greatly reduce interface-state density and enhance reliability of both n- and p-SiC MOS devices. The involved physical mechanisms could be attributed to steam-enhanced out-diffusion of CO and removal of interstitial carbon as well as carbon clusters, steam-enhanced nitrogen passivation and steam-induced hydrogen passivation of dangling bonds and carbon-related traps at the interface. As a result, N2O nitridation with slight modification could still be a superior process for preparing high-quality gate dielectric of both n- and p-SiC MOS devices in the industry-preferred N2O environment. © 2003 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.subjectInterface propertiesen_HK
dc.subjectMOS devicesen_HK
dc.subjectN2O nitridationen_HK
dc.subjectSilicon carbideen_HK
dc.subjectSiO2en_HK
dc.titleSteam-induced interface improvement of N2O-nitrided SiO2 grown on 6H-SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1101&volume=47&spage=1397&epage=1400&date=2003&atitle=Steam-induced+interface+improvement+of+N2O-nitrided+SiO2+grown+on+6H-SiCen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0038-1101(03)00012-1en_HK
dc.identifier.scopuseid_2-s2.0-0038515386en_HK
dc.identifier.hkuros90628en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038515386&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume47en_HK
dc.identifier.issue8en_HK
dc.identifier.spage1397en_HK
dc.identifier.epage1400en_HK
dc.identifier.isiWOS:000183226500019-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK

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