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Conference Paper: A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric

TitleA study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Authors
Li, CWang, CLeung, CHLai, PTXu, JP
Issue Date2009
DescriptionINFOS, P3, Cambridge
Persistent Identifierhttp://hdl.handle.net/10722/62009

 

DC FieldValueLanguage
dc.contributor.authorLi, Cen_HK
dc.contributor.authorWang, Cen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.date.accessioned2010-07-13T03:52:02Z-
dc.date.available2010-07-13T03:52:02Z-
dc.date.issued2009en_HK
dc.identifier.urihttp://hdl.handle.net/10722/62009-
dc.descriptionINFOS, P3, Cambridgeen_HK
dc.languageengen_HK
dc.titleA study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK

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