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Article: A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment

TitleA study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment
Authors
KeywordsPhysics Engineering
Issue Date1997
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1997, v. 82 n. 4, p. 1947-1950 How to Cite?
AbstractA low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of nitrided n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) after the completion of all conventional processing steps. The interface and oxide-charge trapping characteristics of the bombarded MOSFETs were investigated as compared to nonbombarded and reoxidized-nitrided n-MOSFETs. It was found that after bombardment, interface state density decreases and interface hardness against hot-carrier bombardment enhances, and oxide charge trapping properties were also improved. The improvements exhibit a turnaround behavior depending on bombardment conditions and could be attributed to stress compensation in the vicinity of the Si/SiO2 interface and an annealing effect. © 1997 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44844
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLo, HBen_HK
dc.contributor.authorGheng, YCen_HK
dc.date.accessioned2007-10-30T06:11:28Z-
dc.date.available2007-10-30T06:11:28Z-
dc.date.issued1997en_HK
dc.identifier.citationJournal Of Applied Physics, 1997, v. 82 n. 4, p. 1947-1950en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44844-
dc.description.abstractA low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of nitrided n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) after the completion of all conventional processing steps. The interface and oxide-charge trapping characteristics of the bombarded MOSFETs were investigated as compared to nonbombarded and reoxidized-nitrided n-MOSFETs. It was found that after bombardment, interface state density decreases and interface hardness against hot-carrier bombardment enhances, and oxide charge trapping properties were also improved. The improvements exhibit a turnaround behavior depending on bombardment conditions and could be attributed to stress compensation in the vicinity of the Si/SiO2 interface and an annealing effect. © 1997 American Institute of Physics.en_HK
dc.format.extent82993 bytes-
dc.format.extent1859 bytes-
dc.format.extent2044 bytes-
dc.format.extent6324 bytes-
dc.format.extent2432 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleA study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardmenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=82&issue=4&spage=1947&epage=1950&date=1997&atitle=A+study+on+interface+and+charge+trapping+properties+of+nitrided+n-channel+metal-oxide-semiconductor+field-effect+transistors+by+backsurface+argon+bombardmenten_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.366007en_HK
dc.identifier.scopuseid_2-s2.0-0345454491en_HK
dc.identifier.hkuros34427-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0345454491&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue4en_HK
dc.identifier.spage1947en_HK
dc.identifier.epage1950en_HK
dc.identifier.isiWOS:A1997XQ79700065-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.scopusauthoridGheng, YC=13303571300en_HK

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