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Article: Suppression of hot-carrier-induced degradation in n-MOSFETS at low temperatures by N 2O-nitridation of gate oxide

TitleSuppression of hot-carrier-induced degradation in n-MOSFETS at low temperatures by N 2O-nitridation of gate oxide
Authors
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1998, v. 42 n. 4, p. 619-626 How to Cite?
AbstractHot-carrier effects of N 2O-nitrided (N2ON) n-MOSFETs at low temperature are investigated under maximum substrate- and gate-current stresses, respectively. The results are compared to those of thermal-oxide (OX) n-MOSFETs. It is found that like the characteristics at room temperature, hot-carrier-induced degradations are greatly suppressed in N2ON devices relative to OX devices under the two stresses, suggesting excellent low-temperature hot-carrier reliability due to nitrogen incorporation at/ near the Si-SiO 2 interface. For an OX device at low temperature, maximum gate-current stress exerts a stronger influence on its transconductance, threshold voltage and subthreshold swing than maximum substrate-current stress, and a two-piece model is used to explain the phenomena. Moreover, less shallow-trap generation observed in the N2ON device than in the OX device at low temperature is also attributed to the role of N 2O nitridation. © 1998 Published by Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155068
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorHuang, Len_HK
dc.contributor.authorLo, HBen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:31:44Z-
dc.date.available2012-08-08T08:31:44Z-
dc.date.issued1998en_HK
dc.identifier.citationSolid-State Electronics, 1998, v. 42 n. 4, p. 619-626en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155068-
dc.description.abstractHot-carrier effects of N 2O-nitrided (N2ON) n-MOSFETs at low temperature are investigated under maximum substrate- and gate-current stresses, respectively. The results are compared to those of thermal-oxide (OX) n-MOSFETs. It is found that like the characteristics at room temperature, hot-carrier-induced degradations are greatly suppressed in N2ON devices relative to OX devices under the two stresses, suggesting excellent low-temperature hot-carrier reliability due to nitrogen incorporation at/ near the Si-SiO 2 interface. For an OX device at low temperature, maximum gate-current stress exerts a stronger influence on its transconductance, threshold voltage and subthreshold swing than maximum substrate-current stress, and a two-piece model is used to explain the phenomena. Moreover, less shallow-trap generation observed in the N2ON device than in the OX device at low temperature is also attributed to the role of N 2O nitridation. © 1998 Published by Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.titleSuppression of hot-carrier-induced degradation in n-MOSFETS at low temperatures by N 2O-nitridation of gate oxideen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1101(97)00244-X-
dc.identifier.scopuseid_2-s2.0-0032041618en_HK
dc.identifier.hkuros34522-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032041618&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume42en_HK
dc.identifier.issue4en_HK
dc.identifier.spage619en_HK
dc.identifier.epage626en_HK
dc.identifier.isiWOS:000073468500019-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridHuang, L=35205328500en_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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