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Article: Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment

TitleSuppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Authors
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 1998, v. 38 n. 9, p. 1407-1411 How to Cite?
AbstractLow-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metaloxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step on the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behavior was observed, indicating that an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si/SiO2 interface, induced by the backsurface bombardment. © 1998 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155077
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHuang, MQen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorZeng, SHen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:31:46Z-
dc.date.available2012-08-08T08:31:46Z-
dc.date.issued1998en_HK
dc.identifier.citationMicroelectronics Reliability, 1998, v. 38 n. 9, p. 1407-1411en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155077-
dc.description.abstractLow-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metaloxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step on the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behavior was observed, indicating that an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si/SiO2 interface, induced by the backsurface bombardment. © 1998 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleSuppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardmenten_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0026-2714(98)00043-2-
dc.identifier.scopuseid_2-s2.0-0032157144en_HK
dc.identifier.hkuros44762-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032157144&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume38en_HK
dc.identifier.issue9en_HK
dc.identifier.spage1407en_HK
dc.identifier.epage1411en_HK
dc.identifier.isiWOS:000077017500006-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridHuang, MQ=7404259759en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridZeng, SH=7202412592en_HK
dc.identifier.scopusauthoridLi, GQ=7407050307en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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