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Conference Paper: Pentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O

TitlePentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O
Authors
Keywords1/f noise
HfO2 dielectrics
Organic thin-film transistors
Pentacene
Pentacene thin-film transistors
Issue Date2008
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4 How to Cite?
AbstractPentacene-based Organic Thin-Film Transistor (OTFT) with HfO 2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N 2O or NH 3 at 200 °C. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the OTFT annealed in NH 3 shows higher carrier mobility, larger on/off current ratio, smaller sub-threshold swing and smaller Hooge parameter than the OTFT annealed in N 2O. Therefore, NH 3-annealed HfO 2 is a promising gate dielectric for the fabrication of high-performance OTFTs. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/61714
ISBN
References

 

DC FieldValueLanguage
dc.contributor.authorDeng, LFen_HK
dc.contributor.authorTang, WMen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2010-07-13T03:45:39Z-
dc.date.available2010-07-13T03:45:39Z-
dc.date.issued2008en_HK
dc.identifier.citationThe 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4en_HK
dc.identifier.isbn978-1-4244-2540-2-
dc.identifier.urihttp://hdl.handle.net/10722/61714-
dc.description.abstractPentacene-based Organic Thin-Film Transistor (OTFT) with HfO 2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N 2O or NH 3 at 200 °C. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the OTFT annealed in NH 3 shows higher carrier mobility, larger on/off current ratio, smaller sub-threshold swing and smaller Hooge parameter than the OTFT annealed in N 2O. Therefore, NH 3-annealed HfO 2 is a promising gate dielectric for the fabrication of high-performance OTFTs. © 2008 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_HK
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits. Copyright © IEEE.-
dc.rights©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subject1/f noise-
dc.subjectHfO2 dielectrics-
dc.subjectOrganic thin-film transistors-
dc.subjectPentacene-
dc.subjectPentacene thin-film transistors-
dc.titlePentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2Oen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hk-
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2008.4760740en_HK
dc.identifier.scopuseid_2-s2.0-63249113342en_HK
dc.identifier.hkuros164272en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63249113342&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage1-
dc.identifier.epage4-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLeung, CH=7402612415en_HK
dc.identifier.scopusauthoridTang, WM=24438163600en_HK
dc.identifier.scopusauthoridDeng, LF=25936092200en_HK
dc.customcontrol.immutablesml 140526-

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