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Conference Paper: Pentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O
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TitlePentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O
 
AuthorsDeng, LF1
Tang, WM1
Leung, CH1
Lai, PT1
Xu, JP2
Che, CM1
 
Keywords1/f noise
HfO2 dielectrics
Organic thin-film transistors
Pentacene
Pentacene thin-film transistors
 
Issue Date2008
 
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
 
CitationThe 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4 [How to Cite?]
DOI: http://dx.doi.org/10.1109/EDSSC.2008.4760740
 
AbstractPentacene-based Organic Thin-Film Transistor (OTFT) with HfO 2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N 2O or NH 3 at 200 °C. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the OTFT annealed in NH 3 shows higher carrier mobility, larger on/off current ratio, smaller sub-threshold swing and smaller Hooge parameter than the OTFT annealed in N 2O. Therefore, NH 3-annealed HfO 2 is a promising gate dielectric for the fabrication of high-performance OTFTs. © 2008 IEEE.
 
ISBN978-1-4244-2540-2
 
DOIhttp://dx.doi.org/10.1109/EDSSC.2008.4760740
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorDeng, LF
 
dc.contributor.authorTang, WM
 
dc.contributor.authorLeung, CH
 
dc.contributor.authorLai, PT
 
dc.contributor.authorXu, JP
 
dc.contributor.authorChe, CM
 
dc.date.accessioned2010-07-13T03:45:39Z
 
dc.date.available2010-07-13T03:45:39Z
 
dc.date.issued2008
 
dc.description.abstractPentacene-based Organic Thin-Film Transistor (OTFT) with HfO 2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N 2O or NH 3 at 200 °C. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the OTFT annealed in NH 3 shows higher carrier mobility, larger on/off current ratio, smaller sub-threshold swing and smaller Hooge parameter than the OTFT annealed in N 2O. Therefore, NH 3-annealed HfO 2 is a promising gate dielectric for the fabrication of high-performance OTFTs. © 2008 IEEE.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationThe 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4 [How to Cite?]
DOI: http://dx.doi.org/10.1109/EDSSC.2008.4760740
 
dc.identifier.doihttp://dx.doi.org/10.1109/EDSSC.2008.4760740
 
dc.identifier.epage4
 
dc.identifier.hkuros164272
 
dc.identifier.isbn978-1-4244-2540-2
 
dc.identifier.scopuseid_2-s2.0-63249113342
 
dc.identifier.spage1
 
dc.identifier.urihttp://hdl.handle.net/10722/61714
 
dc.languageeng
 
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
 
dc.publisher.placeUnited States
 
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedings
 
dc.relation.referencesReferences in Scopus
 
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits. Copyright © IEEE.
 
dc.rights©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subject1/f noise
 
dc.subjectHfO2 dielectrics
 
dc.subjectOrganic thin-film transistors
 
dc.subjectPentacene
 
dc.subjectPentacene thin-film transistors
 
dc.titlePentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O
 
dc.typeConference_Paper
 
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<contributor.author>Tang, WM</contributor.author>
<contributor.author>Leung, CH</contributor.author>
<contributor.author>Lai, PT</contributor.author>
<contributor.author>Xu, JP</contributor.author>
<contributor.author>Che, CM</contributor.author>
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<date.available>2010-07-13T03:45:39Z</date.available>
<date.issued>2008</date.issued>
<identifier.citation>The 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4</identifier.citation>
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<description.abstract>Pentacene-based Organic Thin-Film Transistor (OTFT) with HfO 2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N 2O or NH 3 at 200 &#176;C. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the OTFT annealed in NH 3 shows higher carrier mobility, larger on/off current ratio, smaller sub-threshold swing and smaller Hooge parameter than the OTFT annealed in N 2O. Therefore, NH 3-annealed HfO 2 is a promising gate dielectric for the fabrication of high-performance OTFTs. &#169; 2008 IEEE.</description.abstract>
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<rights>IEEE Conference on Electron Devices and Solid-State Circuits. Copyright &#169; IEEE.</rights>
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<subject>HfO2 dielectrics</subject>
<subject>Organic thin-film transistors</subject>
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Author Affiliations
  1. The University of Hong Kong
  2. Huazhong University of Science and Technology