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Conference Paper: Sensing characteristics of a novel NH 3-nitrided schottky-diode hydrogen sensor

TitleSensing characteristics of a novel NH 3-nitrided schottky-diode hydrogen sensor
Authors
Issue Date2004
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000354
Citation
Ieee International Symposium On Industrial Electronics, 2004, v. 1, p. 43-47 How to Cite?
AbstractA novel NHi-nitrided Schottky-diode hydrogen sensor has been successfully fabricated Measurements have been performed to investigate the sensitivity, stability and response speed of the sensor at different temperatures and hydrogen concentrations. It can respond to hydrogen variation very quickly and can give significant response ewn at low hydrogen concentration. The studied device exhibits high sensitivity of 350 % at 300 °C when 800 ppm IJ in N2 gas is introduced. The sensitivity is 15 times greater than that of the Pt-SiC sensor. The excellent hydrogen-sensing characteristics of this novel sensor make it very suitable for detecting hydrogen leakage in high-temperature environment. The effects of hydrogen adsorption on the barrier height and hydrogen reaction kinetics are also investigated. ©2004 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/46504
References

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2007-10-30T06:51:27Z-
dc.date.available2007-10-30T06:51:27Z-
dc.date.issued2004en_HK
dc.identifier.citationIeee International Symposium On Industrial Electronics, 2004, v. 1, p. 43-47en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46504-
dc.description.abstractA novel NHi-nitrided Schottky-diode hydrogen sensor has been successfully fabricated Measurements have been performed to investigate the sensitivity, stability and response speed of the sensor at different temperatures and hydrogen concentrations. It can respond to hydrogen variation very quickly and can give significant response ewn at low hydrogen concentration. The studied device exhibits high sensitivity of 350 % at 300 °C when 800 ppm IJ in N2 gas is introduced. The sensitivity is 15 times greater than that of the Pt-SiC sensor. The excellent hydrogen-sensing characteristics of this novel sensor make it very suitable for detecting hydrogen leakage in high-temperature environment. The effects of hydrogen adsorption on the barrier height and hydrogen reaction kinetics are also investigated. ©2004 IEEE.en_HK
dc.format.extent728058 bytes-
dc.format.extent2174 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000354en_HK
dc.relation.ispartofIEEE International Symposium on Industrial Electronicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleSensing characteristics of a novel NH 3-nitrided schottky-diode hydrogen sensoren_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/ISIE.2004.1571779en_HK
dc.identifier.scopuseid_2-s2.0-66649085857en_HK
dc.identifier.hkuros94046-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-66649085857&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume1en_HK
dc.identifier.spage43en_HK
dc.identifier.epage47en_HK
dc.identifier.scopusauthoridTang, WM=24438163600en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK

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