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Article: A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric

TitleA study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Authors
KeywordsCapacitance-voltage characterization
Fluorine incorporation
Ge MOS
High-k dielectric
Issue Date2009
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/mee
Citation
Microelectronic Engineering, 2009, v. 86 n. 7-9, p. 1596-1598 How to Cite?
AbstractIn this work, Ge p-MOS capacitors with HfTiON dielectric were fabricated. Fluorine was incorporated by post-deposition plasma annealing or pre-deposition plasma treatment. Experimental results showed that fluorine could result in lower interface-state density, smaller frequency dispersion and better high-field reliability, with the former method better than the latter. © 2009 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155522
ISSN
2015 Impact Factor: 1.277
2015 SCImago Journal Rankings: 0.551
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, CXen_HK
dc.contributor.authorWang, CDen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.date.accessioned2012-08-08T08:33:55Z-
dc.date.available2012-08-08T08:33:55Z-
dc.date.issued2009en_HK
dc.identifier.citationMicroelectronic Engineering, 2009, v. 86 n. 7-9, p. 1596-1598en_HK
dc.identifier.issn0167-9317en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155522-
dc.description.abstractIn this work, Ge p-MOS capacitors with HfTiON dielectric were fabricated. Fluorine was incorporated by post-deposition plasma annealing or pre-deposition plasma treatment. Experimental results showed that fluorine could result in lower interface-state density, smaller frequency dispersion and better high-field reliability, with the former method better than the latter. © 2009 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/meeen_HK
dc.relation.ispartofMicroelectronic Engineeringen_HK
dc.subjectCapacitance-voltage characterizationen_HK
dc.subjectFluorine incorporationen_HK
dc.subjectGe MOSen_HK
dc.subjectHigh-k dielectricen_HK
dc.titleA study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectricen_HK
dc.typeArticleen_HK
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.mee.2009.03.022en_HK
dc.identifier.scopuseid_2-s2.0-67349089890en_HK
dc.identifier.hkuros179039-
dc.identifier.hkuros164345-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-67349089890&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue7-9en_HK
dc.identifier.spage1596en_HK
dc.identifier.epage1598en_HK
dc.identifier.isiWOS:000267460100019-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridWang, CD=7501645623en_HK
dc.identifier.scopusauthoridLeung, CH=7402612415en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK

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