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Article: Plasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric

TitlePlasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric
Authors
Issue Date2015
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2015, v. 62, p. 1235-1240 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/217030

 

DC FieldValueLanguage
dc.contributor.authorWang, LS-
dc.contributor.authorXu, J-
dc.contributor.authorLiu, L-
dc.contributor.authorLu, H-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2015-09-18T05:46:31Z-
dc.date.available2015-09-18T05:46:31Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Electron Devices, 2015, v. 62, p. 1235-1240-
dc.identifier.urihttp://hdl.handle.net/10722/217030-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titlePlasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric-
dc.typeArticle-
dc.identifier.emailLiu, L: liulu@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityXu, J=rp00197-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TED.2015.2396972-
dc.identifier.hkuros254204-
dc.identifier.volume62-
dc.identifier.spage1235-
dc.identifier.epage1240-

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