File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/TED.2015.2396972
- Scopus: eid_2-s2.0-85027926760
- WOS: WOS:000351753900024
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Plasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric
Title | Plasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric |
---|---|
Authors | |
Keywords | HfTiON gate-dielectric InGaAs metal-oxide-semiconductor (MOS) interface-state nitrided Ga2O3(Gd2O3) (GGON) interlayer plasma-nitridation |
Issue Date | 2015 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 |
Citation | IEEE Transactions on Electron Devices, 2015, v. 62, p. 1235-1240 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/217030 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.785 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, LS | - |
dc.contributor.author | Xu, J | - |
dc.contributor.author | Liu, L | - |
dc.contributor.author | Lu, H | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Tang, WM | - |
dc.date.accessioned | 2015-09-18T05:46:31Z | - |
dc.date.available | 2015-09-18T05:46:31Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, 2015, v. 62, p. 1235-1240 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10722/217030 | - |
dc.language | eng | - |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | HfTiON gate-dielectric | - |
dc.subject | InGaAs metal-oxide-semiconductor (MOS) | - |
dc.subject | interface-state | - |
dc.subject | nitrided Ga2O3(Gd2O3) (GGON) interlayer | - |
dc.subject | plasma-nitridation | - |
dc.title | Plasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric | - |
dc.type | Article | - |
dc.identifier.email | Liu, L: liulu@hku.hk | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Xu, J=rp00197 | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/TED.2015.2396972 | - |
dc.identifier.scopus | eid_2-s2.0-85027926760 | - |
dc.identifier.hkuros | 254204 | - |
dc.identifier.volume | 62 | - |
dc.identifier.spage | 1235 | - |
dc.identifier.epage | 1240 | - |
dc.identifier.eissn | 1557-9646 | - |
dc.identifier.isi | WOS:000351753900024 | - |
dc.identifier.issnl | 0018-9383 | - |