Browsing by Author rp00197

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TitleAuthor(s)Issue Date
 
1/f noise behaviors of NO-nitrided n-MOSFETs
Journal:Solid-State Electronics
Xu, JPLai, PTCheng, YC
2001
 
1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
Journal:Journal of Applied Physics
Xu, JPLai, PTCheng, YC
1999
 
A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Xu, JPLi, YPLai, PTChen, WBXu, SG
2006
 
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects
Journal:Microelectronics Reliability
Xu, JPLi, YPLai, PTChen, WBXu, SGGuan, JG
2008
 
Analysis on accuracy of charge-pumping measurement with gate sawtooth pulses
Journal:IEEE Transactions on Electron Devices
Lai, PTXu, JPPoek, CKCheng, YC
1998
 
Analysis on hydrogen-sensitive characteristics of Schottky sensor with N2O-grown oxynitride as gate insulator
Journal:Chinese Journal of Sensors and Actuators
Han, BXu, JPLai, PTLi, YP
2004
 
An analysis on stress-induced degradation of 1/f noise in n-MOSFETs
Proceeding/Conference:Proceedings of 15th International Conference Noise in Physical Systems and 1/f Fluctuations
Lai, PTXu, JCheng, YC
1999
 
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode
Journal:Microelectronics Reliability
Xu, JPXiao, XLai, PT
2010
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, FXu, JPChen, JJXu, HXLi, CXLai, PT
2009
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Journal:Applied Physics A: Materials Science and Processing
Xu, JPZhang, XFLi, CXChan, CLLai, PT
2010
 
A comparison between NO-annealed O2- and N2O-grown gate dielectrics
Proceeding/Conference:IEEE Hong Kong Electron Devices Meeting Proceedings
Lai, PTXu, JPCheng, YC
1998
 
Comparison between TaON/SiO2 and HfON/SiO2 as dual tunnel layer in charge-trapping flash memory applications
Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings
Chen, JXu, JLiu, LXu, HXLai, PT
2012
 
A comparison between the interface properties of N2O-nitrided and N2O-grown oxides
Journal:Solid-State Electronics
Xu, JPLai, PTCheng, YC
1998
 
Determination of optimal insulator thickness for MISiC hydrogen sensors
Proceeding/Conference:Solid-State Electronics
Xu, JPLai, PTHan, BTang, WM
2004
 
Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's
Journal:IEEE Transactions on Electron Devices
Xu, JPLai, PTCheng, YC
2000
 
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
Journal:Chinese Physics
Zhang, XFXu, JPLai, PTLi, CXGuan, JG
2007
 
Effect of SiO2/SiC interface on inversion channel electron mobility of 4H-SiC n-MOSFET
Journal:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Xu, JWu, HLai, PTHan, B
2004
 
Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Li, CXXu, HXXu, JPLai, PT
2009
 
The effects of duty cycle and voltage swing of gate pulse on the AC-stress-induced degradation of nMOSFETs with N2O gate oxides
Journal:Microelectronics Reliability
Zeng, XLai, PTXu, JP
1998
 
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
Journal:Solid-State Electronics
Li, CXLeung, CHLai, PTXu, JP
2010
Showing results 1 to 20 of 109  next >