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Conference Paper: A comparison between NO-annealed O2- and N2O-grown gate dielectrics

TitleA comparison between NO-annealed O2- and N2O-grown gate dielectrics
Authors
KeywordsElectronics
Issue Date1998
PublisherIEEE.
Citation
IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 36-39 How to Cite?
AbstractQualities of oxynitrides prepared by annealing O2- and N2O-grown oxides in NO ambient are investigated. Harder oxide/Si interface, less charge trapping and higher charge-to-breakdown characteristics are observed in NO-annealed N2O-grown (N2ONO) oxynitride than NO-annealed O2-grown (O2NO) oxynitride. The involved mechanism lies in higher interfacial nitrogen concentration and total nitrogen content in N2ONO oxynitride than O2NO oxynitride for the same anneal temperature and time.
Persistent Identifierhttp://hdl.handle.net/10722/46106
ISBN

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-10-30T06:42:41Z-
dc.date.available2007-10-30T06:42:41Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 36-39en_HK
dc.identifier.isbn0780349326-
dc.identifier.urihttp://hdl.handle.net/10722/46106-
dc.description.abstractQualities of oxynitrides prepared by annealing O2- and N2O-grown oxides in NO ambient are investigated. Harder oxide/Si interface, less charge trapping and higher charge-to-breakdown characteristics are observed in NO-annealed N2O-grown (N2ONO) oxynitride than NO-annealed O2-grown (O2NO) oxynitride. The involved mechanism lies in higher interfacial nitrogen concentration and total nitrogen content in N2ONO oxynitride than O2NO oxynitride for the same anneal temperature and time.en_HK
dc.format.extent293631 bytes-
dc.format.extent2044 bytes-
dc.format.extent6324 bytes-
dc.format.extent2432 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Hong Kong Electron Devices Meeting Proceedings-
dc.rightsIEEE Hong Kong Electron Devices Meeting Proceedings. Copyright © IEEE.en_HK
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectElectronicsen_HK
dc.titleA comparison between NO-annealed O2- and N2O-grown gate dielectricsen_HK
dc.typeConference_Paperen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.1998.740183en_HK
dc.identifier.hkuros44821-
dc.identifier.hkuros240648-

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