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Conference Paper: A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
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TitleA 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
 
AuthorsXu, JP2
Li, YP2
Lai, PT1
Chen, WB2
Xu, SG2
 
Issue Date2006
 
Citation2005 Ieee Conference On Electron Devices And Solid-State Circuits, Edssc, 2006, p. 253-256 [How to Cite?]
DOI: http://dx.doi.org/10.1109/EDSSC.2005.1635254
 
AbstractA threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data. © 2005 IEEE.
 
DOIhttp://dx.doi.org/10.1109/EDSSC.2005.1635254
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorXu, JP
 
dc.contributor.authorLi, YP
 
dc.contributor.authorLai, PT
 
dc.contributor.authorChen, WB
 
dc.contributor.authorXu, SG
 
dc.date.accessioned2012-08-08T09:00:02Z
 
dc.date.available2012-08-08T09:00:02Z
 
dc.date.issued2006
 
dc.description.abstractA threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data. © 2005 IEEE.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citation2005 Ieee Conference On Electron Devices And Solid-State Circuits, Edssc, 2006, p. 253-256 [How to Cite?]
DOI: http://dx.doi.org/10.1109/EDSSC.2005.1635254
 
dc.identifier.doihttp://dx.doi.org/10.1109/EDSSC.2005.1635254
 
dc.identifier.epage256
 
dc.identifier.scopuseid_2-s2.0-43549116550
 
dc.identifier.spage253
 
dc.identifier.urihttp://hdl.handle.net/10722/158515
 
dc.languageeng
 
dc.relation.ispartof2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
 
dc.relation.referencesReferences in Scopus
 
dc.titleA 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
 
dc.typeConference_Paper
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Xu, JP</contributor.author>
<contributor.author>Li, YP</contributor.author>
<contributor.author>Lai, PT</contributor.author>
<contributor.author>Chen, WB</contributor.author>
<contributor.author>Xu, SG</contributor.author>
<date.accessioned>2012-08-08T09:00:02Z</date.accessioned>
<date.available>2012-08-08T09:00:02Z</date.available>
<date.issued>2006</date.issued>
<identifier.citation>2005 Ieee Conference On Electron Devices And Solid-State Circuits, Edssc, 2006, p. 253-256</identifier.citation>
<identifier.uri>http://hdl.handle.net/10722/158515</identifier.uri>
<description.abstract>A threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data. &#169; 2005 IEEE.</description.abstract>
<language>eng</language>
<relation.ispartof>2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC</relation.ispartof>
<title>A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects</title>
<type>Conference_Paper</type>
<description.nature>Link_to_subscribed_fulltext</description.nature>
<identifier.doi>10.1109/EDSSC.2005.1635254</identifier.doi>
<identifier.scopus>eid_2-s2.0-43549116550</identifier.scopus>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-43549116550&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.spage>253</identifier.spage>
<identifier.epage>256</identifier.epage>
</item>
Author Affiliations
  1. The University of Hong Kong
  2. Huazhong University of Science and Technology