Conference Paper: A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
| Title | A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects |
|---|---|
| Authors | Xu, JP2 Li, YP2 Lai, PT1 Chen, WB2 Xu, SG2 |
| Issue Date | 2006 |
| Citation | 2005 Ieee Conference On Electron Devices And Solid-State Circuits, Edssc, 2006, p. 253-256 [How to Cite?] DOI: http://dx.doi.org/10.1109/EDSSC.2005.1635254 |
| Abstract | A threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data. © 2005 IEEE. |
| DOI | http://dx.doi.org/10.1109/EDSSC.2005.1635254 |
| References | References in Scopus |
| dc.contributor.author | Xu, JP |
|---|---|
| dc.contributor.author | Li, YP |
| dc.contributor.author | Lai, PT |
| dc.contributor.author | Chen, WB |
| dc.contributor.author | Xu, SG |
| dc.date.accessioned | 2012-08-08T09:00:02Z |
| dc.date.available | 2012-08-08T09:00:02Z |
| dc.date.issued | 2006 |
| dc.description.abstract | A threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data. © 2005 IEEE. |
| dc.description.nature | Link_to_subscribed_fulltext |
| dc.identifier.citation | 2005 Ieee Conference On Electron Devices And Solid-State Circuits, Edssc, 2006, p. 253-256 [How to Cite?] DOI: http://dx.doi.org/10.1109/EDSSC.2005.1635254 |
| dc.identifier.doi | http://dx.doi.org/10.1109/EDSSC.2005.1635254 |
| dc.identifier.epage | 256 |
| dc.identifier.scopus | eid_2-s2.0-43549116550 |
| dc.identifier.spage | 253 |
| dc.identifier.uri | http://hdl.handle.net/10722/158515 |
| dc.language | eng |
| dc.relation.ispartof | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC |
| dc.relation.references | References in Scopus |
| dc.title | A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects |
| dc.type | Conference_Paper |
Author Affiliations
- The University of Hong Kong
- Huazhong University of Science and Technology