Article: 1/f noise behaviors of NO-nitrided n-MOSFETs
| Title | 1/f noise behaviors of NO-nitrided n-MOSFETs |
|---|---|
| Authors | Xu, JP2 Lai, PT1 Cheng, YC1 |
| Keywords | 1/f Noise Hot-carrier stress MOS devices MOSFETs Nitridation |
| Issue Date | 2001 |
| Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse |
| Citation | Solid-State Electronics, 2001, v. 45 n. 3, p. 431-433 [How to Cite?] DOI: http://dx.doi.org/10.1016/S0038-1101(01)00046-6 |
| Abstract | 1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f noise at low frequencies and enhanced stability of noise properties under hot-carrier stress are achieved by annealing NO-nitrided gate oxide in an N2O ambient. The physical mechanisms involved lie in the fact that N2O annealing partly removes the oxide traps situated farther away from the oxide/Si interface and simultaneousy increases interfacial nitrogen incorporation. © 2001 Elsevier Science Ltd. |
| ISSN | 0038-1101 2011 Impact Factor: 1.397 2011 SCImago Journal Rankings: 0.172 |
| DOI | http://dx.doi.org/10.1016/S0038-1101(01)00046-6 |
| ISI Accession Number ID | WOS:000168511700010 |
| References | References in Scopus |
| dc.contributor.author | Xu, JP |
|---|---|
| dc.contributor.author | Lai, PT |
| dc.contributor.author | Cheng, YC |
| dc.date.accessioned | 2012-08-08T08:32:04Z |
| dc.date.available | 2012-08-08T08:32:04Z |
| dc.date.issued | 2001 |
| dc.description.abstract | 1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f noise at low frequencies and enhanced stability of noise properties under hot-carrier stress are achieved by annealing NO-nitrided gate oxide in an N2O ambient. The physical mechanisms involved lie in the fact that N2O annealing partly removes the oxide traps situated farther away from the oxide/Si interface and simultaneousy increases interfacial nitrogen incorporation. © 2001 Elsevier Science Ltd. |
| dc.description.nature | Link_to_subscribed_fulltext |
| dc.identifier.citation | Solid-State Electronics, 2001, v. 45 n. 3, p. 431-433 [How to Cite?] DOI: http://dx.doi.org/10.1016/S0038-1101(01)00046-6 |
| dc.identifier.doi | http://dx.doi.org/10.1016/S0038-1101(01)00046-6 |
| dc.identifier.epage | 433 |
| dc.identifier.hkuros | 61936 |
| dc.identifier.isi | WOS:000168511700010 |
| dc.identifier.issn | 0038-1101 2011 Impact Factor: 1.397 2011 SCImago Journal Rankings: 0.172 |
| dc.identifier.issue | 3 |
| dc.identifier.scopus | eid_2-s2.0-0035277686 |
| dc.identifier.spage | 431 |
| dc.identifier.uri | http://hdl.handle.net/10722/155145 |
| dc.identifier.volume | 45 |
| dc.language | eng |
| dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse |
| dc.publisher.place | United Kingdom |
| dc.relation.ispartof | Solid-State Electronics |
| dc.relation.references | References in Scopus |
| dc.subject | 1/f Noise |
| dc.subject | Hot-carrier stress |
| dc.subject | MOS devices |
| dc.subject | MOSFETs |
| dc.subject | Nitridation |
| dc.title | 1/f noise behaviors of NO-nitrided n-MOSFETs |
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Huazhong University of Science and Technology