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Article: 1/f noise behaviors of NO-nitrided n-MOSFETs
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Title1/f noise behaviors of NO-nitrided n-MOSFETs
 
AuthorsXu, JP2
Lai, PT1
Cheng, YC1
 
Keywords1/f Noise
Hot-carrier stress
MOS devices
MOSFETs
Nitridation
 
Issue Date2001
 
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
 
CitationSolid-State Electronics, 2001, v. 45 n. 3, p. 431-433 [How to Cite?]
DOI: http://dx.doi.org/10.1016/S0038-1101(01)00046-6
 
Abstract1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f noise at low frequencies and enhanced stability of noise properties under hot-carrier stress are achieved by annealing NO-nitrided gate oxide in an N2O ambient. The physical mechanisms involved lie in the fact that N2O annealing partly removes the oxide traps situated farther away from the oxide/Si interface and simultaneousy increases interfacial nitrogen incorporation. © 2001 Elsevier Science Ltd.
 
ISSN0038-1101
2013 Impact Factor: 1.514
2013 SCImago Journal Rankings: 0.819
 
DOIhttp://dx.doi.org/10.1016/S0038-1101(01)00046-6
 
ISI Accession Number IDWOS:000168511700010
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorXu, JP
 
dc.contributor.authorLai, PT
 
dc.contributor.authorCheng, YC
 
dc.date.accessioned2012-08-08T08:32:04Z
 
dc.date.available2012-08-08T08:32:04Z
 
dc.date.issued2001
 
dc.description.abstract1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f noise at low frequencies and enhanced stability of noise properties under hot-carrier stress are achieved by annealing NO-nitrided gate oxide in an N2O ambient. The physical mechanisms involved lie in the fact that N2O annealing partly removes the oxide traps situated farther away from the oxide/Si interface and simultaneousy increases interfacial nitrogen incorporation. © 2001 Elsevier Science Ltd.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationSolid-State Electronics, 2001, v. 45 n. 3, p. 431-433 [How to Cite?]
DOI: http://dx.doi.org/10.1016/S0038-1101(01)00046-6
 
dc.identifier.doihttp://dx.doi.org/10.1016/S0038-1101(01)00046-6
 
dc.identifier.epage433
 
dc.identifier.hkuros61936
 
dc.identifier.isiWOS:000168511700010
 
dc.identifier.issn0038-1101
2013 Impact Factor: 1.514
2013 SCImago Journal Rankings: 0.819
 
dc.identifier.issue3
 
dc.identifier.scopuseid_2-s2.0-0035277686
 
dc.identifier.spage431
 
dc.identifier.urihttp://hdl.handle.net/10722/155145
 
dc.identifier.volume45
 
dc.languageeng
 
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofSolid-State Electronics
 
dc.relation.referencesReferences in Scopus
 
dc.subject1/f Noise
 
dc.subjectHot-carrier stress
 
dc.subjectMOS devices
 
dc.subjectMOSFETs
 
dc.subjectNitridation
 
dc.title1/f noise behaviors of NO-nitrided n-MOSFETs
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. Huazhong University of Science and Technology