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Article: 1/f noise behaviors of NO-nitrided n-MOSFETs

Title1/f noise behaviors of NO-nitrided n-MOSFETs
Authors
Keywords1/f Noise
Hot-carrier stress
MOS devices
MOSFETs
Nitridation
Issue Date2001
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2001, v. 45 n. 3, p. 431-433 How to Cite?
Abstract
1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f noise at low frequencies and enhanced stability of noise properties under hot-carrier stress are achieved by annealing NO-nitrided gate oxide in an N2O ambient. The physical mechanisms involved lie in the fact that N2O annealing partly removes the oxide traps situated farther away from the oxide/Si interface and simultaneousy increases interfacial nitrogen incorporation. © 2001 Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155145
ISSN
2013 Impact Factor: 1.514
2013 SCImago Journal Rankings: 0.819
ISI Accession Number ID
References

 

Author Affiliations
  1. The University of Hong Kong
  2. Huazhong University of Science and Technology
DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:32:04Z-
dc.date.available2012-08-08T08:32:04Z-
dc.date.issued2001en_HK
dc.identifier.citationSolid-State Electronics, 2001, v. 45 n. 3, p. 431-433en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155145-
dc.description.abstract1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f noise at low frequencies and enhanced stability of noise properties under hot-carrier stress are achieved by annealing NO-nitrided gate oxide in an N2O ambient. The physical mechanisms involved lie in the fact that N2O annealing partly removes the oxide traps situated farther away from the oxide/Si interface and simultaneousy increases interfacial nitrogen incorporation. © 2001 Elsevier Science Ltd.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.subject1/f Noiseen_HK
dc.subjectHot-carrier stressen_HK
dc.subjectMOS devicesen_HK
dc.subjectMOSFETsen_HK
dc.subjectNitridationen_HK
dc.title1/f noise behaviors of NO-nitrided n-MOSFETsen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1101(01)00046-6en_HK
dc.identifier.scopuseid_2-s2.0-0035277686en_HK
dc.identifier.hkuros61936-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035277686&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume45en_HK
dc.identifier.issue3en_HK
dc.identifier.spage431en_HK
dc.identifier.epage433en_HK
dc.identifier.isiWOS:000168511700010-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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