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Article: Analysis on accuracy of charge-pumping measurement with gate sawtooth pulses

TitleAnalysis on accuracy of charge-pumping measurement with gate sawtooth pulses
Authors
KeywordsCharge carrier processes
Mosfet’s
Silicon materials/devices.
Issue Date1998
PublisherIEEE.
Citation
IEEE Transactions on Electron Devices, 1998, v. 45 n. 4, p. 947-952 How to Cite?
AbstractCharge-pumping (CP) measurement is performed on MOSFETs with their gates tied to sawtooth pulses. Influence of both rise time (tr) and fall time (tf) on the CP current of the devices with different channel lengths is investigated at different pulse frequencies. Results show that the dominant mechanism affecting the measurement accuracy is the energy range of interface-trap distribution Dit(E) swept by the gate signal for frequencies below 500 kHz and carrier emission for frequencies above 500 kHz. For frequencies higher than 600 kHz, incomplete recombination could be an additional mechanism when tf is too short. Hence, it is suggested that low frequency is more favorable than high frequency, especially for sawtooth pulses with long tr and short tf , due to little carrier emission and negligible geometric effects even for devices as long as 50 μm. However, if high frequency (e.g. 1 MHz) is required to obtain a sufficiently large S/N ratio in the CP current, sawtooth pulses with equal tr and tf should be chosen for the least carrier emission effect and thus more reliable results on interface-state density, Moreover, for both sawtooth and trapezoidal pulses with a typical amplitude of 5 V, a lower limit of 200 ns for tr and tf is necessary to suppress all the undesirable effects in devices shorter than at least 20 μm.
Persistent Identifierhttp://hdl.handle.net/10722/42765
ISSN
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ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorPoek, CKen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-03-23T04:31:45Z-
dc.date.available2007-03-23T04:31:45Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Transactions on Electron Devices, 1998, v. 45 n. 4, p. 947-952en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42765-
dc.description.abstractCharge-pumping (CP) measurement is performed on MOSFETs with their gates tied to sawtooth pulses. Influence of both rise time (tr) and fall time (tf) on the CP current of the devices with different channel lengths is investigated at different pulse frequencies. Results show that the dominant mechanism affecting the measurement accuracy is the energy range of interface-trap distribution Dit(E) swept by the gate signal for frequencies below 500 kHz and carrier emission for frequencies above 500 kHz. For frequencies higher than 600 kHz, incomplete recombination could be an additional mechanism when tf is too short. Hence, it is suggested that low frequency is more favorable than high frequency, especially for sawtooth pulses with long tr and short tf , due to little carrier emission and negligible geometric effects even for devices as long as 50 μm. However, if high frequency (e.g. 1 MHz) is required to obtain a sufficiently large S/N ratio in the CP current, sawtooth pulses with equal tr and tf should be chosen for the least carrier emission effect and thus more reliable results on interface-state density, Moreover, for both sawtooth and trapezoidal pulses with a typical amplitude of 5 V, a lower limit of 200 ns for tr and tf is necessary to suppress all the undesirable effects in devices shorter than at least 20 μm.en_HK
dc.format.extent161866 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectCharge carrier processesen_HK
dc.subjectMosfet’sen_HK
dc.subjectSilicon materials/devices.en_HK
dc.titleAnalysis on accuracy of charge-pumping measurement with gate sawtooth pulsesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=45&issue=4&spage=947&epage=952&date=1998&atitle=Analysis+on+accuracy+of+charge-pumping+measurement+with+gate+sawtooth+pulsesen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/16.662809en_HK
dc.identifier.hkuros33982-
dc.identifier.isiWOS:000072662800028-

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