Article: 1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses

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Title1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
AuthorsXu, JP1
Lai, PT1
Cheng, YC1
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
CitationJournal Of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.371501
AbstractDegradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.
ISSN0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
DOIhttp://dx.doi.org/10.1063/1.371501
ISI Accession Number IDWOS:000083189100072
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorXu, JP
dc.contributor.authorLai, PT
dc.contributor.authorCheng, YC
dc.date.accessioned2007-01-08T02:29:09Z
dc.date.available2007-01-08T02:29:09Z
dc.date.issued1999
dc.description.abstractDegradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.
dc.description.naturepublished_or_final_version
dc.format.extent72484 bytes
dc.format.extent3688 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.identifier.citationJournal Of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.371501
dc.identifier.doihttp://dx.doi.org/10.1063/1.371501
dc.identifier.epage5206
dc.identifier.hkuros54541
dc.identifier.isiWOS:000083189100072
dc.identifier.issn0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
dc.identifier.issue9
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-0037790521
dc.identifier.spage5203
dc.identifier.urihttp://hdl.handle.net/10722/42108
dc.identifier.volume86
dc.languageeng
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
dc.publisher.placeUnited States
dc.relation.ispartofJournal of Applied Physics
dc.relation.referencesReferences in Scopus
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectPhysics engineering
dc.title1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong