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Article: 1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses

Title1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206 How to Cite?
AbstractDegradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42108
ISSN
2014 Impact Factor: 2.183
2014 SCImago Journal Rankings: 0.912
ISI Accession Number ID
References

 

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dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-01-08T02:29:09Z-
dc.date.available2007-01-08T02:29:09Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal Of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42108-
dc.description.abstractDegradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.en_HK
dc.format.extent72484 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.title1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stressesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=86&issue=9&spage=5203&epage=5206&date=1999&atitle=1/f+noise+in+n-channel+metal-oxide-semiconductor+field-effect+transistors+under+different+hot-carrier+stressesen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.371501en_HK
dc.identifier.scopuseid_2-s2.0-0037790521en_HK
dc.identifier.hkuros54541-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037790521&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5203en_HK
dc.identifier.epage5206en_HK
dc.identifier.isiWOS:000083189100072-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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