File Download
 
Links for fulltext
(May Require Subscription)
 
Supplementary

Article: 1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
  • Basic View
  • Metadata View
  • XML View
Title1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
 
AuthorsXu, JP1
Lai, PT1
Cheng, YC1
 
KeywordsPhysics engineering
 
Issue Date1999
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.371501
 
AbstractDegradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.
 
ISSN0021-8979
2013 Impact Factor: 2.185
 
DOIhttp://dx.doi.org/10.1063/1.371501
 
ISI Accession Number IDWOS:000083189100072
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorXu, JP
 
dc.contributor.authorLai, PT
 
dc.contributor.authorCheng, YC
 
dc.date.accessioned2007-01-08T02:29:09Z
 
dc.date.available2007-01-08T02:29:09Z
 
dc.date.issued1999
 
dc.description.abstractDegradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent72484 bytes
 
dc.format.extent3688 bytes
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypetext/plain
 
dc.identifier.citationJournal Of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.371501
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.371501
 
dc.identifier.epage5206
 
dc.identifier.hkuros54541
 
dc.identifier.isiWOS:000083189100072
 
dc.identifier.issn0021-8979
2013 Impact Factor: 2.185
 
dc.identifier.issue9
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-0037790521
 
dc.identifier.spage5203
 
dc.identifier.urihttp://hdl.handle.net/10722/42108
 
dc.identifier.volume86
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering
 
dc.title1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Xu, JP</contributor.author>
<contributor.author>Lai, PT</contributor.author>
<contributor.author>Cheng, YC</contributor.author>
<date.accessioned>2007-01-08T02:29:09Z</date.accessioned>
<date.available>2007-01-08T02:29:09Z</date.available>
<date.issued>1999</date.issued>
<identifier.citation>Journal Of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206</identifier.citation>
<identifier.issn>0021-8979</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/42108</identifier.uri>
<description.abstract>Degradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. &#169; 1999 American Institute of Physics.</description.abstract>
<format.extent>72484 bytes</format.extent>
<format.extent>3688 bytes</format.extent>
<format.mimetype>application/pdf</format.mimetype>
<format.mimetype>text/plain</format.mimetype>
<language>eng</language>
<publisher>American Institute of Physics. The Journal&apos;s web site is located at http://jap.aip.org/jap/staff.jsp</publisher>
<relation.ispartof>Journal of Applied Physics</relation.ispartof>
<rights>Journal of Applied Physics. Copyright &#169; American Institute of Physics.</rights>
<rights>Creative Commons: Attribution 3.0 Hong Kong License</rights>
<subject>Physics engineering</subject>
<title>1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses</title>
<type>Article</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=0021-8979&amp;volume=86&amp;issue=9&amp;spage=5203&amp;epage=5206&amp;date=1999&amp;atitle=1/f+noise+in+n-channel+metal-oxide-semiconductor+field-effect+transistors+under+different+hot-carrier+stresses</identifier.openurl>
<description.nature>published_or_final_version</description.nature>
<identifier.doi>10.1063/1.371501</identifier.doi>
<identifier.scopus>eid_2-s2.0-0037790521</identifier.scopus>
<identifier.hkuros>54541</identifier.hkuros>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-0037790521&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.volume>86</identifier.volume>
<identifier.issue>9</identifier.issue>
<identifier.spage>5203</identifier.spage>
<identifier.epage>5206</identifier.epage>
<identifier.isi>WOS:000083189100072</identifier.isi>
<publisher.place>United States</publisher.place>
<bitstream.url>http://hub.hku.hk/bitstream/10722/42108/1/54541.pdf</bitstream.url>
</item>
Author Affiliations
  1. The University of Hong Kong