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Conference Paper: An analysis on stress-induced degradation of 1/f noise in n-MOSFETs

TitleAn analysis on stress-induced degradation of 1/f noise in n-MOSFETs
Authors
Lai, PTXu, JCheng, YC
Issue Date1999
PublisherBentham.
Citation
The 15th international conference on noise in physical systems and 1/f fluctuations, Hong Kong, China, 23-26 August 1999. In the Proceedings of 15th International Conference Noise in Physical Systems and 1/f Fluctuations, 1999, p. 449-452 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/204168
ISBN
9781874612285

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorXu, Jen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2014-09-19T20:07:44Z-
dc.date.available2014-09-19T20:07:44Z-
dc.date.issued1999en_US
dc.identifier.citationThe 15th international conference on noise in physical systems and 1/f fluctuations, Hong Kong, China, 23-26 August 1999. In the Proceedings of 15th International Conference Noise in Physical Systems and 1/f Fluctuations, 1999, p. 449-452en_US
dc.identifier.isbn9781874612285-
dc.identifier.urihttp://hdl.handle.net/10722/204168-
dc.languageengen_US
dc.publisherBentham.-
dc.relation.ispartofProceedings of 15th International Conference Noise in Physical Systems and 1/f Fluctuationsen_US
dc.titleAn analysis on stress-induced degradation of 1/f noise in n-MOSFETsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.emailXu, J: jpxu@eee.hku.hken_US
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.authorityXu, J=rp00197en_US
dc.identifier.hkuros240650en_US
dc.identifier.spage449en_US
dc.identifier.epage452en_US
dc.publisher.placeLondon-

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