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Article: Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer

TitleComparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Authors
KeywordsCapacitance-equivalent thickness
Comparative studies
Device reliability
Electrical property
Gate leakages
Issue Date2010
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2010, v. 99 n. 1, p. 177-180 How to Cite?
AbstractThe electrical properties and high-field reliability of HfTa-based gate-dielectric metal-oxide-semiconductor (MOS) devices with and without AlON interlayer on Ge substrate are investigated. Experimental results show that theMOS capacitor with HfTaON/AlON stack gate dielectric exhibits low interface-state/oxide-charge densities, low gate leakage, small capacitance equivalent thickness (∼1.1 nm), and high dielectric constant (∼20). All of these should be attributed to the blocking role of the ultrathin AlON interlayer against interdiffusions of Ge, Hf, and Ta and penetration of O into the Ge substrate, with the latter effectively suppressing the unintentional formation of unstable poorquality low-k GeO x and giving a superior AlON/Ge interface. Moreover, incorporation of N into both the interlayer and high-k dielectric further improves the device reliability under high-field stress through the formation of strong Nrelated bonds. © Springer-Verlag 2009.
Persistent Identifierhttp://hdl.handle.net/10722/124018
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China60776016
Council of the Hong Kong Special Administrative Region (HKSAR), ChinaHKU 713308E
University of Hong Kong00600009
Funding Information:

This work is financially supported by the National Natural Science Foundation of China (Grant No. 60776016), the Research Grant Council of the Hong Kong Special Administrative Region (HKSAR), China (Project No. HKU 713308E), and the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong.

References
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DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorZhang, XFen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-10-19T04:33:32Z-
dc.date.available2010-10-19T04:33:32Z-
dc.date.issued2010en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2010, v. 99 n. 1, p. 177-180en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/124018-
dc.description.abstractThe electrical properties and high-field reliability of HfTa-based gate-dielectric metal-oxide-semiconductor (MOS) devices with and without AlON interlayer on Ge substrate are investigated. Experimental results show that theMOS capacitor with HfTaON/AlON stack gate dielectric exhibits low interface-state/oxide-charge densities, low gate leakage, small capacitance equivalent thickness (∼1.1 nm), and high dielectric constant (∼20). All of these should be attributed to the blocking role of the ultrathin AlON interlayer against interdiffusions of Ge, Hf, and Ta and penetration of O into the Ge substrate, with the latter effectively suppressing the unintentional formation of unstable poorquality low-k GeO x and giving a superior AlON/Ge interface. Moreover, incorporation of N into both the interlayer and high-k dielectric further improves the device reliability under high-field stress through the formation of strong Nrelated bonds. © Springer-Verlag 2009.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.rightsThe original publication is available at www.springerlink.comen_HK
dc.subjectCapacitance-equivalent thickness-
dc.subjectComparative studies-
dc.subjectDevice reliability-
dc.subjectElectrical property-
dc.subjectGate leakages-
dc.titleComparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayeren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0947-8396&volume=99&issue=1&spage=177&epage=180&date=2010&atitle=Comparative+study+of+HfTa-based+gate-dielectric+Ge+metal-oxide-+semiconductor+capacitors+with+and+without+AlON+interlayer-
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1007/s00339-009-5480-zen_HK
dc.identifier.scopuseid_2-s2.0-77953538817en_HK
dc.identifier.hkuros179069-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77953538817&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume99en_HK
dc.identifier.issue1en_HK
dc.identifier.spage177en_HK
dc.identifier.epage180en_HK
dc.identifier.isiWOS:000276069900024-
dc.publisher.placeGermanyen_HK
dc.description.otherSpringer Open Choice, 01 Dec 2010-
dc.relation.projectHigh-k Gate Dielectrics for High-Performance Germanium MISFET's-
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridZhang, XF=14627948200en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.citeulike6226877-

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