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Article: A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode

TitleA carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode
Authors
Issue Date2010
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2010, v. 50 n. 8, p. 1081-1086 How to Cite?
AbstractA mobility model for high-k gate-dielectric Ge pMOSFET with metal gate electrode is proposed by considering the scattering of channel carriers by surface-optical phonons in the high-k gate dielectric. The effects of structural and physical parameters (e.g. gate dielectric thickness, electron density, effective electron mass and permittivity of gate electrode) on the carrier mobility are investigated. The carrier mobility of Ge pMOSFET with metal gate electrode is compared to that with poly-Si gate electrode. It is theoretically shown that the carrier mobility can be largely enhanced when poly-Si gate electrode is replaced by metal gate electrode. This is because metal gate electrode plays a significant role in screening the coupling between the optical phonons in the high-k gate dielectric and the charge carriers in the conduction channel. © 2010 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155580
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China60776016
RGC of HKSAR, ChinaHKU 713308E
Nanotechnology Research Institute, University of Hong Kong00600009
Funding Information:

This work is financially supported by the National Natural Science Foundation of China (Grant No. 60776016), the RGC of HKSAR, China (Project No. HKU 713308E), and the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorXiao, Xen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2012-08-08T08:34:11Z-
dc.date.available2012-08-08T08:34:11Z-
dc.date.issued2010en_HK
dc.identifier.citationMicroelectronics Reliability, 2010, v. 50 n. 8, p. 1081-1086en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155580-
dc.description.abstractA mobility model for high-k gate-dielectric Ge pMOSFET with metal gate electrode is proposed by considering the scattering of channel carriers by surface-optical phonons in the high-k gate dielectric. The effects of structural and physical parameters (e.g. gate dielectric thickness, electron density, effective electron mass and permittivity of gate electrode) on the carrier mobility are investigated. The carrier mobility of Ge pMOSFET with metal gate electrode is compared to that with poly-Si gate electrode. It is theoretically shown that the carrier mobility can be largely enhanced when poly-Si gate electrode is replaced by metal gate electrode. This is because metal gate electrode plays a significant role in screening the coupling between the optical phonons in the high-k gate dielectric and the charge carriers in the conduction channel. © 2010 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleA carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrodeen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.microrel.2010.04.016en_HK
dc.identifier.scopuseid_2-s2.0-77955429637en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955429637&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume50en_HK
dc.identifier.issue8en_HK
dc.identifier.spage1081en_HK
dc.identifier.epage1086en_HK
dc.identifier.isiWOS:000280987400006-
dc.publisher.placeUnited Kingdomen_HK
dc.relation.projectHigh-k Gate Dielectrics for High-Performance Germanium MISFET's-
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridXiao, X=24465835500en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.citeulike7282811-

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