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	Title	Author(s)	Issue Date
	Distinct Topological Surface States on the Two Terminations of MnBi4Te7 Journal:Physical Review X	Wu, X Li, J Ma, XM Zhang, Y Liu, Y Zhou, CS Shao, J Wang, Q Hao, YJ Feng, Y Schwier, EF Kumar, S Sun, H Liu, P Shimada, K Miyamoto, K Okuda, T Wang, K Xie, M Chen, C Liu, Q Liu, C Zhao, Y	2020
	Solution methods for synthesis of various oxide nanostructures Proceeding/Conference:Proceedings of SPIE - The International Society for Optical Engineering	Li, D Leung, YH Djurišić, AB Xie, MH Chan, WK	2005
	Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire Journal:Applied Physics Letters	Zhao, DG Xu, SJ Xie, MH Tong, SY Yang, H	2003
	Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates Journal:Applied Physics Letters	Xu, SJ Wang, HJ Cheung, SH Li, Q Dai, XQ Xie, MH Tong, SY	2003
	Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers Journal:Applied Physics Letters	Xu, SJ Zheng, LX Cheung, SH Xie, MH Tong, SY Yang, H	2002
	Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN Journal:Applied Physics Letters	Lu, XH Yu, PY Zheng, LX Xu, SJ Xie, MH Tong, SY	2003
	Current transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states Journal:Applied Physics Letters	Huang, Y Chen, XD Fung, S Beling, CD Ling, CC Dai, XQ Xie, MH	2005
	Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods Journal:Applied Physics Letters	Li, D Leung, YH Djurišić, AB Liu, ZT Xie, MH Shi, SL Xu, SJ Chan, WK	2004
	Growth of N, N′-di(naphthalene-1-yl)-N, N′-diphenyl-benzidine dome structures Journal:Journal of Applied Physics	Leung, YH Djurišić, AB Cheung, CH Xie, MH Chan, WK	2005
	Magnetic properties of Mn doped ZnO tetrapod structures Journal:Applied Physics Letters	Roy, VAL Djurišić, AB Liu, H Zhang, XX Leung, YH Xie, MH Gao, J Lui, HF Surya, C	2004
	InN Island shape and its dependence on growth condition of molecular-beam epitaxy Journal:Applied Physics Letters	Cao, YG Xie, MH Liu, Y Ng, YF Wu, HS Tong, SY	2003
	A study of Inx Ga1-x N growth by reflection high-energy electron diffraction Journal:Journal of Applied Physics	Liu, Y Xie, MH Cao, YG Wu, HS Tong, SY	2005
	X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices Journal:Applied Physics Letters	Xu, SJ Wang, H Li, Q Xie, MH Wang, XC Fan, WJ Feng, SL	2000
	Surface atomic arrangement visualization via reference-atom-specific holography Journal:Physical Review Letters	Wu, H Xu, S Ma, S Lau, WP Xie, MH Tong, SY	2002
	Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy Journal:Physical Review Letters	Xie, MH Seutter, SM Zhu, WK Zheng, LX Wu, H Tong, SY	1999
	Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy Journal:Applied Physics Letters	Xie, MH Zheng, LX Cheung, SH Ng, YF Wu, H Tong, SY Ohtani, N	2000
	Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy Journal:Physical Review Letters	Zheng, LX Xie, MH Seutter, SM Cheung, SH Tong, SY	2000
	Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy Journal:Applied Physics Letters	Ng, YF Cao, YG Xie, MH Wang, XL Tong, SY	2002
	Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces Journal:Physical Review B (Condensed Matter)	Zheng, LX Xie, MH Tong, SY	2000
	Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy Journal:Physical Review B (Condensed Matter)	Xie, MH Cheung, SH Zheng, LX Ng, YF Wu, H Ohtani, N Tong, SY	2000
	Initial stage of GaN growth and its implication to defect formation in films Journal:Physical Review B (Condensed Matter)	Cheung, SH Zheng, LX Xie, MH Tong, SY Ohtani, N	2001
	Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy Journal:Physical Review B (Condensed Matter)	Cao, YG Xie, MH Liu, Y Xu, SH Ng, YF Wu, HS Tong, SY	2003
	Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion Journal:Physical Review B (Condensed Matter)	Xu, SH Wu, H Dai, XQ Lau, WP Zheng, LX Xie, MH Tong, SY	2003
	In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy Journal:Physical Review B (Condensed Matter and Materials Physics)	Cao, YG Xu, SH Lü, W Dai, XQ Chan, YF Wang, N Liu, Y Wu, HS Xie, MH Tong, SY	2005
	Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy Journal:Physical Review B (Condensed Matter and Materials Physics)	Liu, Y Cao, YG Wu, HS Xie, MH Tong, SY	2005