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Article: Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

TitleObservation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy
Authors
KeywordsPhysics
Issue Date2000
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2000, v. 85 n. 11, p. 2352-2355 How to Cite?
AbstractGaN (0001) films grown by molecular beam epitaxy (MBE) were studied using scanning tunneling microscopy (STM). 'Ghost' islands were observed on surfaces grown under excess Ga conditions. These ghost islands were associated to a metastable, intermediate nucleation state of the surface.
Persistent Identifierhttp://hdl.handle.net/10722/42455
ISSN
2015 Impact Factor: 7.645
2015 SCImago Journal Rankings: 3.731
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorSeutter, SMen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-01-29T08:50:23Z-
dc.date.available2007-01-29T08:50:23Z-
dc.date.issued2000en_HK
dc.identifier.citationPhysical Review Letters, 2000, v. 85 n. 11, p. 2352-2355en_HK
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42455-
dc.description.abstractGaN (0001) films grown by molecular beam epitaxy (MBE) were studied using scanning tunneling microscopy (STM). 'Ghost' islands were observed on surfaces grown under excess Ga conditions. These ghost islands were associated to a metastable, intermediate nucleation state of the surface.en_HK
dc.format.extent167658 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleObservation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=85&issue=11&spage=2352&epage=2355&date=2000&atitle=Observation+of+%27Ghost%27+Islands+and+Surfactant+Effect+of+Surface+Gallium+Atoms+during+GaN+Growth+by+Molecular+Beam+Epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevLett.85.2352en_HK
dc.identifier.scopuseid_2-s2.0-0034274802en_HK
dc.identifier.hkuros55913-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034274802&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue11en_HK
dc.identifier.spage2352en_HK
dc.identifier.epage2355en_HK
dc.identifier.isiWOS:000089170900033-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridSeutter, SM=6603424542en_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.citeulike1543540-

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