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Article: Growth of N, N′-di(naphthalene-1-yl)-N, N′-diphenyl-benzidine dome structures

TitleGrowth of N, N′-di(naphthalene-1-yl)-N, N′-diphenyl-benzidine dome structures
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2005, v. 97 n. 3 How to Cite?
AbstractN,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine samples exhibiting interesting nano/microstructure were fabricated by thermal evaporation in a tube furnace under Ar gas flow. We investigated the influence of the substrate type, substrate temperature, source temperature, and the gas flow rate on the obtained morphology. The deposited material was investigated using scanning electron microscopy, x-ray diffraction, and photoluminescence. We found that the substrate temperature was the factor which significantly affected the obtained morphology, while other factors such as substrate type, source temperature, and gas flow mainly affected the size distribution of the features but not the type of morphology observed. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42365
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLeung, YHen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorCheung, CHen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2007-01-29T08:47:49Z-
dc.date.available2007-01-29T08:47:49Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal Of Applied Physics, 2005, v. 97 n. 3en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42365-
dc.description.abstractN,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine samples exhibiting interesting nano/microstructure were fabricated by thermal evaporation in a tube furnace under Ar gas flow. We investigated the influence of the substrate type, substrate temperature, source temperature, and the gas flow rate on the obtained morphology. The deposited material was investigated using scanning electron microscopy, x-ray diffraction, and photoluminescence. We found that the substrate temperature was the factor which significantly affected the obtained morphology, while other factors such as substrate type, source temperature, and gas flow mainly affected the size distribution of the features but not the type of morphology observed. © 2005 American Institute of Physics.en_HK
dc.format.extent278157 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleGrowth of N, N′-di(naphthalene-1-yl)-N, N′-diphenyl-benzidine dome structuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=97&spage=033515:1&epage=5&date=2005&atitle=Growth+of+N,+N%27-di(naphthalene-1-yl)-N,+N%27-diphenyl-benzidine+dome+structuresen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1847722en_HK
dc.identifier.scopuseid_2-s2.0-13644276160en_HK
dc.identifier.hkuros97057-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-13644276160&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume97en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1-
dc.identifier.epage5-
dc.identifier.isiWOS:000226778300021-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLeung, YH=7201463866en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridCheung, CH=8618960900en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK

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