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Article: InN Island shape and its dependence on growth condition of molecular-beam epitaxy

TitleInN Island shape and its dependence on growth condition of molecular-beam epitaxy
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 25, p. 5157-5159 How to Cite?
AbstractThe three-dimensional (3D) island shapes of the InN and its dependence on growth conditions of molecular-beam epitaxy (MBE) were analyzed. The islands were dislocated and the strain in an island depended on its size. The pillar-shaped islands with low aspect ratios represented the equilibrium shape, and the pyrimidal islands with higher aspect ratios were limited by kinetics during MBE growth. The decreasing trend of island aspect ratio with respect to island size was attributed to gradual relaxation of residual strain in dislocated islands.
Persistent Identifierhttp://hdl.handle.net/10722/42490
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorCao, YGen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorNg, YFen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-01-29T08:51:02Z-
dc.date.available2007-01-29T08:51:02Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 25, p. 5157-5159en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42490-
dc.description.abstractThe three-dimensional (3D) island shapes of the InN and its dependence on growth conditions of molecular-beam epitaxy (MBE) were analyzed. The islands were dislocated and the strain in an island depended on its size. The pillar-shaped islands with low aspect ratios represented the equilibrium shape, and the pyrimidal islands with higher aspect ratios were limited by kinetics during MBE growth. The decreasing trend of island aspect ratio with respect to island size was attributed to gradual relaxation of residual strain in dislocated islands.en_HK
dc.format.extent77950 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleInN Island shape and its dependence on growth condition of molecular-beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=83&issue=25&spage=5157&epage=5159&date=2003&atitle=InN+island+shape+and+its+dependence+on+growth+condition+of+molecular-beam+epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1635077en_HK
dc.identifier.scopuseid_2-s2.0-0942299454en_HK
dc.identifier.hkuros85473-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0942299454&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume83en_HK
dc.identifier.issue25en_HK
dc.identifier.spage5157en_HK
dc.identifier.epage5159en_HK
dc.identifier.isiWOS:000187341800013-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCao, YG=7404524244en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridLiu, Y=26643293600en_HK
dc.identifier.scopusauthoridNg, YF=7202471126en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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