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Article: Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers

TitleComparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
Authors
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2002, v. 81 n. 23, p. 4389-4391 How to Cite?
AbstractThe broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers was discussed. The coupling parameters between exciton and acoustic and longitudinal optical phonons were obtained for both structures. The analysis showed that the coupling constants of both exciton-acoustic optial phonon coupling and exciton-longitudinal optical phonon coupling for zinc-blende GaN were almost twice as much as the corresponding values of wurtzite GaN.
Persistent Identifierhttp://hdl.handle.net/10722/42210
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.contributor.authorYang, Hen_HK
dc.date.accessioned2007-01-08T02:31:41Z-
dc.date.available2007-01-08T02:31:41Z-
dc.date.issued2002en_HK
dc.identifier.citationApplied Physics Letters, 2002, v. 81 n. 23, p. 4389-4391en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42210-
dc.description.abstractThe broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers was discussed. The coupling parameters between exciton and acoustic and longitudinal optical phonons were obtained for both structures. The analysis showed that the coupling constants of both exciton-acoustic optial phonon coupling and exciton-longitudinal optical phonon coupling for zinc-blende GaN were almost twice as much as the corresponding values of wurtzite GaN.en_HK
dc.format.extent63387 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleComparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayersen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=81&issue=23&spage=4389&epage=4391 &date=2002&atitle=Comparative+study+on+the+broadening+of+exciton+luminescence+linewidth+due+to+phonon+in+zinc-blende+and+wurtzite+GaN+epilayersen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1526450en_HK
dc.identifier.scopuseid_2-s2.0-0037011471en_HK
dc.identifier.hkuros75095-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037011471&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue23en_HK
dc.identifier.spage4389en_HK
dc.identifier.epage4391en_HK
dc.identifier.isiWOS:000179481900026-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK

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