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Article: Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion
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TitleDirect observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion
 
AuthorsXu, SH1
Wu, H1
Dai, XQ1
Lau, WP1
Zheng, LX1
Xie, MH1
Tong, SY2
 
KeywordsPhysics
 
Issue Date2003
 
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
 
CitationPhysical Review B - Condensed Matter And Materials Physics, 2003, v. 67 n. 12, p. 1254091-1254094 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.67.125409
 
AbstractA low-energy electron diffraction (LEED) Patterson function (PF) with multiple incident angles is used to obtain three-dimensional interatomic information of hexagonal GaN(0001) grown on a 6H-SiC(0001)-√3 x √3 surface. A Ga-Ga atomic pair between the Ga adlayer and the terminating Ga layer is observed in the LEED PF. This provides direct experimental evidence to support the structural model proposed by first-principles calculations. The LEED PF also shows that the GaN film has a hexagonal structure and the surface has single-bilayer steps.
 
ISSN0163-1829
 
DOIhttp://dx.doi.org/10.1103/PhysRevB.67.125409
 
ISI Accession Number IDWOS:000182158000092
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorXu, SH
 
dc.contributor.authorWu, H
 
dc.contributor.authorDai, XQ
 
dc.contributor.authorLau, WP
 
dc.contributor.authorZheng, LX
 
dc.contributor.authorXie, MH
 
dc.contributor.authorTong, SY
 
dc.date.accessioned2007-03-23T04:44:46Z
 
dc.date.available2007-03-23T04:44:46Z
 
dc.date.issued2003
 
dc.description.abstractA low-energy electron diffraction (LEED) Patterson function (PF) with multiple incident angles is used to obtain three-dimensional interatomic information of hexagonal GaN(0001) grown on a 6H-SiC(0001)-√3 x √3 surface. A Ga-Ga atomic pair between the Ga adlayer and the terminating Ga layer is observed in the LEED PF. This provides direct experimental evidence to support the structural model proposed by first-principles calculations. The LEED PF also shows that the GaN film has a hexagonal structure and the surface has single-bilayer steps.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent449374 bytes
 
dc.format.extent26624 bytes
 
dc.format.mimetypeapplication/pdf
 
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dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2003, v. 67 n. 12, p. 1254091-1254094 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.67.125409
 
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.67.125409
 
dc.identifier.epage1254094
 
dc.identifier.hkuros77193
 
dc.identifier.isiWOS:000182158000092
 
dc.identifier.issn0163-1829
 
dc.identifier.issue12
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-0038558145
 
dc.identifier.spage1254091
 
dc.identifier.urihttp://hdl.handle.net/10722/43389
 
dc.identifier.volume67
 
dc.languageeng
 
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics
 
dc.titleDirect observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. City University of Hong Kong