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Article: Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
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TitleScaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
 
AuthorsCao, YG2 1
Xie, MH2
Liu, Y2
Xu, SH2
Ng, YF2
Wu, HS2
Tong, SY3
 
KeywordsPhysics
 
Issue Date2003
 
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
 
CitationPhysical Review B - Condensed Matter And Materials Physics, 2003, v. 68 n. 16, p. 1613041-1613044 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.68.161304
 
AbstractThe scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.
 
ISSN0163-1829
 
DOIhttp://dx.doi.org/10.1103/PhysRevB.68.161304
 
ISI Accession Number IDWOS:000186571800007
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorCao, YG
 
dc.contributor.authorXie, MH
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorXu, SH
 
dc.contributor.authorNg, YF
 
dc.contributor.authorWu, HS
 
dc.contributor.authorTong, SY
 
dc.date.accessioned2007-03-23T04:45:04Z
 
dc.date.available2007-03-23T04:45:04Z
 
dc.date.issued2003
 
dc.description.abstractThe scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent388752 bytes
 
dc.format.extent26624 bytes
 
dc.format.mimetypeapplication/pdf
 
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dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2003, v. 68 n. 16, p. 1613041-1613044 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.68.161304
 
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.68.161304
 
dc.identifier.epage1613044
 
dc.identifier.hkuros85046
 
dc.identifier.isiWOS:000186571800007
 
dc.identifier.issn0163-1829
 
dc.identifier.issue16
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-10644253563
 
dc.identifier.spage1613041
 
dc.identifier.urihttp://hdl.handle.net/10722/43404
 
dc.identifier.volume68
 
dc.languageeng
 
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics
 
dc.titleScaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
 
dc.typeArticle
 
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Author Affiliations
  1. Institute of Physics Chinese Academy of Sciences
  2. The University of Hong Kong
  3. City University of Hong Kong