Article: Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

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TitleScaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
AuthorsCao, YG1 2
Xie, MH2
Liu, Y2
Xu, SH2
Ng, YF2
Wu, HS2
Tong, SY3
KeywordsPhysics
Issue Date2003
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
CitationPhysical Review B - Condensed Matter And Materials Physics, 2003, v. 68 n. 16, p. 1613041-1613044 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.68.161304
AbstractThe scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.
ISSN0163-1829
DOIhttp://dx.doi.org/10.1103/PhysRevB.68.161304
ISI Accession Number IDWOS:000186571800007
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorCao, YG
dc.contributor.authorXie, MH
dc.contributor.authorLiu, Y
dc.contributor.authorXu, SH
dc.contributor.authorNg, YF
dc.contributor.authorWu, HS
dc.contributor.authorTong, SY
dc.date.accessioned2007-03-23T04:45:04Z
dc.date.available2007-03-23T04:45:04Z
dc.date.issued2003
dc.description.abstractThe scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.
dc.description.naturepublished_or_final_version
dc.format.extent388752 bytes
dc.format.extent26624 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/msword
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2003, v. 68 n. 16, p. 1613041-1613044 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.68.161304
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.68.161304
dc.identifier.epage1613044
dc.identifier.hkuros85046
dc.identifier.isiWOS:000186571800007
dc.identifier.issn0163-1829
dc.identifier.issue16
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-10644253563
dc.identifier.spage1613041
dc.identifier.urihttp://hdl.handle.net/10722/43404
dc.identifier.volume68
dc.languageeng
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
dc.publisher.placeUnited States
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physics
dc.relation.referencesReferences in Scopus
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectPhysics
dc.titleScaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
dc.typeArticle
Author Affiliations
  1. Institute of Physics Chinese Academy of Sciences
  2. The University of Hong Kong
  3. City University of Hong Kong