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Article: Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

TitleShallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 17, p. 3477-3479 How to Cite?
AbstractShallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates was investigated. The GaN epilayers grown with plasma-assisted molecular-beam epitaxy were optically characterized by photoluminescence and excitation spectra. Results showed that the localized states which were induced by the structural defect located about 100 meV above the maximum valence band of GaN.
Persistent Identifierhttp://hdl.handle.net/10722/42221
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorWang, HJen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorDai, XQen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-01-08T02:31:53Z-
dc.date.available2007-01-08T02:31:53Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 17, p. 3477-3479en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42221-
dc.description.abstractShallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates was investigated. The GaN epilayers grown with plasma-assisted molecular-beam epitaxy were optically characterized by photoluminescence and excitation spectra. Results showed that the localized states which were induced by the structural defect located about 100 meV above the maximum valence band of GaN.en_HK
dc.format.extent61610 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleShallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substratesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=83&issue=17&spage=3477&epage=3479&date=2003&atitle=Shallow+optically+active+structural+defect+in+wurtzite+GaN+epilayers+grown+on+stepped+4H-SiC+substratesen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1623006en_HK
dc.identifier.scopuseid_2-s2.0-0242666902en_HK
dc.identifier.hkuros84985-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0242666902&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume83en_HK
dc.identifier.issue17en_HK
dc.identifier.spage3477en_HK
dc.identifier.epage3479en_HK
dc.identifier.isiWOS:000186068400011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridWang, HJ=8694347500en_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridDai, XQ=55237280400en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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