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Article: A study of Inx Ga1-x N growth by reflection high-energy electron diffraction

TitleA study of Inx Ga1-x N growth by reflection high-energy electron diffraction
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2005, v. 97 n. 2 How to Cite?
AbstractEpitaxial growth of Inx Ga1-x N alloys on GaN (0001) by plasma-assisted molecular-beam epitaxy is investigated using the in situ reflection high-energy electron-diffraction (RHEED) technique. Based on RHEED pattern changes over time, the transition of growth mode from two-dimensional (2D) nucleation to three-dimensional islanding is studied for various indium compositions. RHEED specular-beam intensity oscillations are recorded during the 2D wetting-layer growth, and the dependences of the oscillation period/frequency on the substrate temperature and source flux are established. By measuring the spacing between diffraction spots in RHEED, we also estimated indium composition, x, in alloys grown under different flux combinations. Incorporation coefficients of both gallium and indium are derived. Possible surface segregation of indium atoms is finally examined. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42501
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorCao, YGen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-01-29T08:51:14Z-
dc.date.available2007-01-29T08:51:14Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal Of Applied Physics, 2005, v. 97 n. 2en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42501-
dc.description.abstractEpitaxial growth of Inx Ga1-x N alloys on GaN (0001) by plasma-assisted molecular-beam epitaxy is investigated using the in situ reflection high-energy electron-diffraction (RHEED) technique. Based on RHEED pattern changes over time, the transition of growth mode from two-dimensional (2D) nucleation to three-dimensional islanding is studied for various indium compositions. RHEED specular-beam intensity oscillations are recorded during the 2D wetting-layer growth, and the dependences of the oscillation period/frequency on the substrate temperature and source flux are established. By measuring the spacing between diffraction spots in RHEED, we also estimated indium composition, x, in alloys grown under different flux combinations. Incorporation coefficients of both gallium and indium are derived. Possible surface segregation of indium atoms is finally examined. © 2005 American Institute of Physics.en_HK
dc.format.extent165603 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleA study of Inx Ga1-x N growth by reflection high-energy electron diffractionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=97&issue=2&spage=023502:1&epage=5&date=2005&atitle=A+study+of+InxGa1-xN+growth+by+reflection+high-energy+electron+diffractionen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1840101en_HK
dc.identifier.scopuseid_2-s2.0-19944430829en_HK
dc.identifier.hkuros97026-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-19944430829&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume97en_HK
dc.identifier.issue2en_HK
dc.identifier.isiWOS:000226700500016-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=26643293600en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridCao, YG=7404524244en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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