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Article: Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN

TitleEvidence for a Type-II band alignment between cubic and hexagonal phases of GaN
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 82 n. 7, p. 1033-1035 How to Cite?
AbstractThe study of photoluminescence spectra of a series of thin, undoped, hexagonal GaN films containing cubic GaN inclusions grown by molecular-beam epitaxy on 6H-SiC was presented. It was shown that an emission peak at ∼3.17 eV in thin, hexagonal GaN films exhibits behaviors typical of a spatially indirect transition. The values of the band offsets extracted from the data were in good agreement with theoretical predictions.
Persistent Identifierhttp://hdl.handle.net/10722/42211
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLu, XHen_HK
dc.contributor.authorYu, PYen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-01-08T02:31:43Z-
dc.date.available2007-01-08T02:31:43Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 82 n. 7, p. 1033-1035en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42211-
dc.description.abstractThe study of photoluminescence spectra of a series of thin, undoped, hexagonal GaN films containing cubic GaN inclusions grown by molecular-beam epitaxy on 6H-SiC was presented. It was shown that an emission peak at ∼3.17 eV in thin, hexagonal GaN films exhibits behaviors typical of a spatially indirect transition. The values of the band offsets extracted from the data were in good agreement with theoretical predictions.en_HK
dc.format.extent116792 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleEvidence for a Type-II band alignment between cubic and hexagonal phases of GaNen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=82&issue=7&spage=1033&epage=1035&date=2003&atitle=Evidence+for+a+Type-II+band+alignment+between+cubic+and+hexagonal+phases+of+GaNen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1541113en_HK
dc.identifier.scopuseid_2-s2.0-0037450215en_HK
dc.identifier.hkuros75729-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037450215&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue7en_HK
dc.identifier.spage1033en_HK
dc.identifier.epage1035en_HK
dc.identifier.isiWOS:000180917000011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLu, XH=12799008300en_HK
dc.identifier.scopusauthoridYu, PY=7403599447en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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