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Article: Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces

TitleAdsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces
Authors
KeywordsPhysics
Issue Date2000
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2000, v. 61 n. 7, p. 4890-4893 How to Cite?
AbstractGallium (Ga) surface adsorption and desorption kinetics on 6H-SiC(0001) are investigated using reflection high-energy electron diffraction. It is found that for Ga adsorption, a wetting layer bonds strongly to the SiC(0001) surface. Additional Ga atoms form droplets on top of the wetting layer. The Ga droplets behave like a metallic liquid. The activation energies for desorption are determined to be 3.5 eV for Ga in the wetting layer and 2.5 eV for Ga in the droplets. It is further found that the desorption of Ga atoms from the wetting layer follows a zero-order kinetics, i.e., the desorption rate is independent of the number of adsorbed atoms. ©2000 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/43293
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-03-23T04:43:01Z-
dc.date.available2007-03-23T04:43:01Z-
dc.date.issued2000en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2000, v. 61 n. 7, p. 4890-4893en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43293-
dc.description.abstractGallium (Ga) surface adsorption and desorption kinetics on 6H-SiC(0001) are investigated using reflection high-energy electron diffraction. It is found that for Ga adsorption, a wetting layer bonds strongly to the SiC(0001) surface. Additional Ga atoms form droplets on top of the wetting layer. The Ga droplets behave like a metallic liquid. The activation energies for desorption are determined to be 3.5 eV for Ga in the wetting layer and 2.5 eV for Ga in the droplets. It is further found that the desorption of Ga atoms from the wetting layer follows a zero-order kinetics, i.e., the desorption rate is independent of the number of adsorbed atoms. ©2000 The American Physical Society.en_HK
dc.format.extent135295 bytes-
dc.format.extent26624 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleAdsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfacesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=61&issue=7&spage=4890&epage=4893&date=2000&atitle=Adsorption+and+desorption+kinetics+of+gallium+atoms+on+6H-SiC(0001)+surfacesen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.61.4890en_HK
dc.identifier.scopuseid_2-s2.0-0000535530en_HK
dc.identifier.hkuros50223-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000535530&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume61en_HK
dc.identifier.issue7en_HK
dc.identifier.spage4890en_HK
dc.identifier.epage4893en_HK
dc.identifier.isiWOS:000085497200095-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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