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Article: In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

TitleIn situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
Authors
KeywordsPhysics
Issue Date2005
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2005, v. 71 n. 15 How to Cite?
Abstract
Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/43468
ISSN
2013 Impact Factor: 3.664
2013 SCImago Journal Rankings: 2.143
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorCao, YGen_HK
dc.contributor.authorXu, SHen_HK
dc.contributor.authorLü, Wen_HK
dc.contributor.authorDai, XQen_HK
dc.contributor.authorChan, YFen_HK
dc.contributor.authorWang, Nen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-03-23T04:46:17Z-
dc.date.available2007-03-23T04:46:17Z-
dc.date.issued2005en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2005, v. 71 n. 15en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43468-
dc.description.abstractIndium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.en_HK
dc.format.extent380095 bytes-
dc.format.extent26624 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleIn situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=71&issue=15&spage=155322:1&epage=5&date=2005&atitle=In+situ+revelation+of+a+zinc-blende+InN+wetting+layer+during+Stranski-Krastanov+growth+on+GaN(0001)+by+molecular-beam+epitaxyen_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.71.155322en_HK
dc.identifier.scopuseid_2-s2.0-28644435139en_HK
dc.identifier.hkuros97947-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-28644435139&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume71en_HK
dc.identifier.issue15en_HK
dc.identifier.isiWOS:000228762900083-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCao, YG=7404524244en_HK
dc.identifier.scopusauthoridXu, SH=36832008600en_HK
dc.identifier.scopusauthoridLü, W=36077781100en_HK
dc.identifier.scopusauthoridDai, XQ=55237280400en_HK
dc.identifier.scopusauthoridChan, YF=26425604500en_HK
dc.identifier.scopusauthoridWang, N=7404340430en_HK
dc.identifier.scopusauthoridLiu, Y=26643293600en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.citeulike1543503-

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