Article: In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

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TitleIn situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
AuthorsCao, YG2
Xu, SH2
Lü, W1 4
Dai, XQ2
Chan, YF5
Wang, N5
Liu, Y2
Wu, HS2
Xie, MH2
Tong, SY3
KeywordsPhysics
Issue Date2005
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
CitationPhysical Review B - Condensed Matter And Materials Physics, 2005, v. 71 n. 15 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.71.155322
AbstractIndium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.
ISSN1098-0121
2011 Impact Factor: 3.691
2011 SCImago Journal Rankings: 0.268
DOIhttp://dx.doi.org/10.1103/PhysRevB.71.155322
ISI Accession Number IDWOS:000228762900083
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorCao, YG
dc.contributor.authorXu, SH
dc.contributor.authorLü, W
dc.contributor.authorDai, XQ
dc.contributor.authorChan, YF
dc.contributor.authorWang, N
dc.contributor.authorLiu, Y
dc.contributor.authorWu, HS
dc.contributor.authorXie, MH
dc.contributor.authorTong, SY
dc.date.accessioned2007-03-23T04:46:17Z
dc.date.available2007-03-23T04:46:17Z
dc.date.issued2005
dc.description.abstractIndium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.
dc.description.naturepublished_or_final_version
dc.format.extent380095 bytes
dc.format.extent26624 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/msword
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2005, v. 71 n. 15 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.71.155322
dc.identifier.citeulike1543503
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.71.155322
dc.identifier.hkuros97947
dc.identifier.isiWOS:000228762900083
dc.identifier.issn1098-0121
2011 Impact Factor: 3.691
2011 SCImago Journal Rankings: 0.268
dc.identifier.issue15
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-28644435139
dc.identifier.urihttp://hdl.handle.net/10722/43468
dc.identifier.volume71
dc.languageeng
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
dc.publisher.placeUnited States
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physics
dc.relation.referencesReferences in Scopus
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectPhysics
dc.titleIn situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
dc.typeArticle
Author Affiliations
  1. Jilin University
  2. The University of Hong Kong
  3. City University of Hong Kong
  4. Chinese Academy of Sciences
  5. Hong Kong University of Science and Technology