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Article: In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
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TitleIn situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
 
AuthorsCao, YG3
Xu, SH3
Lü, W2 1
Dai, XQ3
Chan, YF5
Wang, N5
Liu, Y3
Wu, HS3
Xie, MH3
Tong, SY4
 
KeywordsPhysics
 
Issue Date2005
 
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
 
CitationPhysical Review B - Condensed Matter And Materials Physics, 2005, v. 71 n. 15 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.71.155322
 
AbstractIndium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.
 
ISSN1098-0121
2013 Impact Factor: 3.664
2013 SCImago Journal Rankings: 2.143
 
DOIhttp://dx.doi.org/10.1103/PhysRevB.71.155322
 
ISI Accession Number IDWOS:000228762900083
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorCao, YG
 
dc.contributor.authorXu, SH
 
dc.contributor.authorLü, W
 
dc.contributor.authorDai, XQ
 
dc.contributor.authorChan, YF
 
dc.contributor.authorWang, N
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorWu, HS
 
dc.contributor.authorXie, MH
 
dc.contributor.authorTong, SY
 
dc.date.accessioned2007-03-23T04:46:17Z
 
dc.date.available2007-03-23T04:46:17Z
 
dc.date.issued2005
 
dc.description.abstractIndium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent380095 bytes
 
dc.format.extent26624 bytes
 
dc.format.mimetypeapplication/pdf
 
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dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2005, v. 71 n. 15 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.71.155322
 
dc.identifier.citeulike1543503
 
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.71.155322
 
dc.identifier.hkuros97947
 
dc.identifier.isiWOS:000228762900083
 
dc.identifier.issn1098-0121
2013 Impact Factor: 3.664
2013 SCImago Journal Rankings: 2.143
 
dc.identifier.issue15
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-28644435139
 
dc.identifier.urihttp://hdl.handle.net/10722/43468
 
dc.identifier.volume71
 
dc.languageeng
 
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics
 
dc.titleIn situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
 
dc.typeArticle
 
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Author Affiliations
  1. Jilin University
  2. Institute of Physics Chinese Academy of Sciences
  3. The University of Hong Kong
  4. City University of Hong Kong
  5. Hong Kong University of Science and Technology