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Article: Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

TitleStress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
Authors
Zhao, DGXu, SJXie, MHTong, SYYang, H
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 4, p. 677-679 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1592306
AbstractStress and its effects on optical properties of GaN epilayers grown in Si(111), 6H-SiC(0001), and c-plane sapphire were investigated. Large tensile stress was present in GaN epilayers grown on Si and 6H-SiC, and a small compressive stress appeared in the film grown on sapphire. The results showed that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films.
Persistent Identifierhttp://hdl.handle.net/10722/42220
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000184336600029
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.contributor.authorYang, Hen_HK
dc.date.accessioned2007-01-08T02:31:52Z-
dc.date.available2007-01-08T02:31:52Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 4, p. 677-679-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42220-
dc.description.abstractStress and its effects on optical properties of GaN epilayers grown in Si(111), 6H-SiC(0001), and c-plane sapphire were investigated. Large tensile stress was present in GaN epilayers grown on Si and 6H-SiC, and a small compressive stress appeared in the film grown on sapphire. The results showed that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films.en_HK
dc.format.extent57940 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, v. 83 n. 4, p. 677-679 and may be found at https://doi.org/10.1063/1.1592306-
dc.subjectPhysics engineeringen_HK
dc.titleStress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphireen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=83&issue=4&spage=677&epage=679&date=2003&atitle=Stress+and+its+effect+on+optical+properties+of+GaN+epilayers+grown+on+Si(111),+6H-SiC(0001),+and+c-plane+sapphireen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1592306en_HK
dc.identifier.scopuseid_2-s2.0-0041511976en_HK
dc.identifier.hkuros84983-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0041511976&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume83en_HK
dc.identifier.issue4en_HK
dc.identifier.spage677en_HK
dc.identifier.epage679en_HK
dc.identifier.isiWOS:000184336600029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.issnl0003-6951-

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