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Article: Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

TitleStress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 4, p. 677-679 How to Cite?
AbstractStress and its effects on optical properties of GaN epilayers grown in Si(111), 6H-SiC(0001), and c-plane sapphire were investigated. Large tensile stress was present in GaN epilayers grown on Si and 6H-SiC, and a small compressive stress appeared in the film grown on sapphire. The results showed that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films.
Persistent Identifierhttp://hdl.handle.net/10722/42220
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.contributor.authorYang, Hen_HK
dc.date.accessioned2007-01-08T02:31:52Z-
dc.date.available2007-01-08T02:31:52Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 4, p. 677-679en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42220-
dc.description.abstractStress and its effects on optical properties of GaN epilayers grown in Si(111), 6H-SiC(0001), and c-plane sapphire were investigated. Large tensile stress was present in GaN epilayers grown on Si and 6H-SiC, and a small compressive stress appeared in the film grown on sapphire. The results showed that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films.en_HK
dc.format.extent57940 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleStress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphireen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=83&issue=4&spage=677&epage=679&date=2003&atitle=Stress+and+its+effect+on+optical+properties+of+GaN+epilayers+grown+on+Si(111),+6H-SiC(0001),+and+c-plane+sapphireen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1592306en_HK
dc.identifier.scopuseid_2-s2.0-0041511976en_HK
dc.identifier.hkuros84983-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0041511976&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume83en_HK
dc.identifier.issue4en_HK
dc.identifier.spage677en_HK
dc.identifier.epage679en_HK
dc.identifier.isiWOS:000184336600029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK

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