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TypeTitleAuthor(s)YearViews
Erratum: Electrical properties of ZnO nanorods studied by conductive atomic force microscopy (Journal of Applied Physics (2011) 110 (052005))Beinik, I; Kratzer, M; Wachauer, A; Wang, L; Lechner, RT; Teichert, C; Motz, C; Anwand, W; Brauer, G; Chen, XY; Hsu, YF; Djurišić, AB201282
 
Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theoryDai, XM; Xu, SJ; Ling, CC; Brauer, G; Anwand, W; Skorupa, W2012111
 
Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO filmFan, J; Zhu, C; Yang, B; Fung, S; Beling, CD; Brauer, G; Anwand, W; Grambole, D; Skorupa, W; Wong, KS; Zhong, YC; Xie, Z; Ling, CC2011210
 
Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystalYe, ZR; Lu, XH; Ding, GW; Fung, S; Ling, CC; Brauer, G; Anwand, W2011411
 
Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystalsZheng, CC; Xu, SJ; Ning, JQ; Chen, YN; Lu, XH; Ling, CC; Che, CM; Gao, GY; Hao, JH; Brauer, G; Anwand, W2011184
 
Electrical properties of ZnO nanorods studied by conductive atomic force microscopyBeinik, I; Kratzer, M; Wachauer, A; Wang, L; Lechner, RT; Teichert, C; Motz, C; Anwand, W; Brauer, G; Chen, XY; Hsu, XY; Djurišić, AB2011151
 
Characterization of microstructural defects in melt grown ZnO single crystalsAnwand, W; Brauer, G; Grynszpan, RI; Cowan, TE; Schulz, D; Klimm, D; Iek, J; Kuriplach, J; Prochzka, I; Ling, CC; Djurii, AB; Klemm, V; Schreiber, G; Rafaja, D2011678
 
Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystalDing, G; Ling, CC; Anwand, W; Brauer, G; Skorupa, W2010232
 
Scanning probe microscopy-based characterization of ZnO nanorodsTeichert, C; Hou, Y; Beinik, I; Chen, X; Hsu, YF; Djurišić, AB; Anwand, W; Brauer, G201074
 
Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputteringFan, JC; W Ding, G; Fung, S; Xie, Z; Zhong, YC; Wong, KS; Brauer, G; Anwand, W; Grambole, D; Ling, CC2010691
 
Deep-level defects study of arsenic-implanted ZnO single crystalZhu, CY; Ling, CC; Brauer, G; Anwand, W; Skorupa, W2009575
 
Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopyBrauer, G; Anwand, W; Grambole, D; Grenzer, J; Skorupa, W; Čížek, J; Kuriplach, J; Procházka, I; Ling, CC; So, CK; Schulz, D; Klimm, D2009725
 
Characterization of ZnO nanostructures: A challenge to positron annihilation spectroscopy and other methodsBrauer, G; Anwand, W; Grambole, D; Egger, W; Sperr, P; Beinik, I; Wang, L; Teichert, C; Kuriplach, J; Lang, J; Zviagin, S; Cizmar, E; Ling, CC; Hsu, YF; Xi, YY; Chen, X; Djurišić, AB; Skorupa, W2009629
 
Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputteringFan, JC; Zhu, CY; Fung, S; Zhong, YC; Wong, KS; Xie, Z; Brauer, G; Anwand, W; Skorupa, W; To, CK; Yang, B; Beling, CD; Ling, CC2009766
 
Defect study in ZnO related structures-A multi-spectroscopic approachLing, CC; Cheung, CK; Gu, QL; Dai, XM; Xu, SJ; Zhu, CY; Luo, JM; Zhu, CY; Tam, KH; Djurišić, AB; Beling, CD; Fung, S; Lu, LW; Brauer, G; Anwand, W; Skorupa, W; Ong, HC2008537
 
Defects characterization in ZnO Schottky contact and homogeneous p-n junctionLing, FCC; Gu, Q; Zhu, C; Hsu, YF; Djurisic, A; Brauer, G; Anwand, W; Skorupa, W2008274
 
Deep level defect study of As-implanted ZnO p-n junctionZhu, C; Ling, FCC; Brauer, G; Anwand, W; Skorupa, W2008183
 
Vacancy-type defects in 6H-silicon carbide induced by He-implantation: A positron annihilation spectroscopy approachZhu, CY; Ling, CC; Brauer, G; Anwand, W; Skorupa, W2008607
 
Influence of electron irradiation on hydrothermally grown zinc oxide single crystalsLu, LW; So, CK; Zhu, CY; Gu, QL; Li, CJ; Fung, S; Brauer, G; Anwand, W; Skorupa, W; Ling, CC2008561
 
Defect study in zinc oxide related structures – Electrical and optical characterizationGu, Q; Ling, FCC; Cheung, CK; Dai, X; Xu, SJ; Tam, KH; Djurisic, A; Wang, RS; Ong, HC; Brauer, G; Anwand, W; Skorupa, W2008222
 
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