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Title	Author(s)	Issue Date	Views
Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer Journal:IEEE Electron Device Letters	Xu, JP Zhang, XF Li, CX Lai, PT Chan, CL	2008	207
Improved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient Journal:IEEE Electron Device Letters	Xu, JP Lai, PT Li, CX Zou, X Chan, CL	2006	216
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment Journal:Applied Physics A: Materials Science and Processing	Xu, JP Zou, X Li, CX Lai, PT Chan, CL	2009	217
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer Journal:Applied Physics Letters	Xu, JP Ji, F Li, CX Lai, PT Guan, JG Liu, YR	2007	116
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer Journal:Applied Physics Letters	Ji, F Xu, JP Liu, JG Li, CX Lai, PT	2011	206
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer Journal:IEEE Electron Device Letters	Ji, F Xu, JP Lai, PT Li, CX Liu, JG	2011	200
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO Journal:Applied Physics A: Materials Science and Processing	Lai, PT Xu, JP Li, CX Chan, CL	2005
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings	Li, CX Zou, X Xu, JP Lai, PT	2008	206
Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO Journal:Microelectronic Engineering	Li, CX Lai, PT Xu, JP	2007	243
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings	Ji, F Xu, JP Lai, PT Li, CX	2007	64
Integrative analyses of acute phase liver graft injury on late phase tumor recurrence after liver transplantation Proceeding/Conference:Transplantation	Lee, NPY Luo, R Wu, H Li, CX Ng, KTP Lam, TW Lo, CM Man, K	2017	64
M2 macrophages promotes tumor growth and invasion in hepatocellular carcinoma. Proceeding/Conference:Cancer Research	Yeung, WH Lee, KW Geng, W Li, CX Ng, TP Lo, CM Guan, X Poon, RTP Fan, ST Man, K	2011	84
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings	Zhang, XF Xu, JP Lai, PT Zou, X Li, CX	2007
Novel mechanism for tissue repair of human induced pluripotent stem cells derived mesenchymal stem cells during liver regeneration Proceeding/Conference:Liver Transplantation	Ma, YY Li, CX Law, B Lian, QZ Man, K Lo, CM	2012	169
Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009	Xu, HX Xu, JP Li, CX Liu, L Lai, PT Chan, CL	2009	182
A physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETs Journal:IEEE Transactions on Electron Devices	Zhang, XF Xu, JP Lai, PT Li, CX	2007
Post-transplant regulatory T cells mobilization via IP10/CXCR3 signaling promote liver tumor recurrence after transplantation Proceeding/Conference:Annual International Congress of the International Liver Transplantation Society, ILTS 2016	Li, CX Ling, C Shao, Y Lo, CM Man, K	2016	35
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients Proceeding/Conference:Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006	Lai, PT Xu, JP Li, CX Zou, X Chen, WB	2007
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric Journal:Microelectronic Engineering	Li, CX Wang, CD Leung, CH Lai, PT Xu, JP	2009	268
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings	Lai, PT Li, CX Xu, JP Zou, X Chan, CL	2005

Showing results 32 to 51 of 60 < previous next >