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Conference Paper: Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient

TitleSuppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Authors
Lai, PTLi, CXXu, JPZou, XChan, CL
KeywordsComputers
Circuits
Issue Date2005
PublisherIEEE.
Citation
The 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005), Hong Kong, China, 19-21 December 2005. In Conference Proceedings, 2005, p. 115-118 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2005.1635219
AbstractWet NO oxidation with wet N 2 anneal is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeO x interlayer and thus a near-perfect GeON dielectric can be obtained by the wet NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate leakage current. This should be attributed to the hydrolysable property of GeO x in water-containing atmosphere. © 2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/45915
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorZou, Xen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2007-10-30T06:38:24Z-
dc.date.available2007-10-30T06:38:24Z-
dc.date.issued2005en_HK
dc.identifier.citationThe 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005), Hong Kong, China, 19-21 December 2005. In Conference Proceedings, 2005, p. 115-118en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45915-
dc.description.abstractWet NO oxidation with wet N 2 anneal is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeO x interlayer and thus a near-perfect GeON dielectric can be obtained by the wet NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate leakage current. This should be attributed to the hydrolysable property of GeO x in water-containing atmosphere. © 2005 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedingsen_HK
dc.rights©2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectComputersen_HK
dc.subjectCircuitsen_HK
dc.titleSuppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambienten_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailChan, CL: clchan@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/EDSSC.2005.1635219en_HK
dc.identifier.scopuseid_2-s2.0-43549092239en_HK
dc.identifier.hkuros120797-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43549092239&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage115en_HK
dc.identifier.epage118en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, CX=13906721600en_HK
dc.identifier.scopusauthoridXu, JP=35754128700en_HK
dc.identifier.scopusauthoridZou, X=23020170400en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK

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