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Article: Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO

TitleImproved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Authors
Issue Date2005
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2005, v. 81 n. 1, p. 159-161 How to Cite?
AbstractThe interface quality and reliability of gate oxides grown on n-/p-type 6H-SiC in diluted NO gas at 1150°C are investigated. As compared to conventional 100%-NO oxidation, the diluted-NO (50% and 23%) oxidations lead to lower interface-state, border-trap and oxide-charge densities. This is attributed to the fact that carbon-accumulation and carbon-removal rates are closer when oxidation is performed in diluted NO, giving a smoother, less disordered and strained interface. Moreover, less degradation of the diluted-NO samples than 100%-NO samples is observed during high-field stressing (±7MV/cm), indicating that stronger SiN bonds are created near/at the SiC/SiO2 interface for oxide grown in diluted NO ambient. © Springer-Verlag 2005.
Persistent Identifierhttp://hdl.handle.net/10722/155263
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorXu, JPen_US
dc.contributor.authorLi, CXen_US
dc.contributor.authorChan, CLen_US
dc.date.accessioned2012-08-08T08:32:35Z-
dc.date.available2012-08-08T08:32:35Z-
dc.date.issued2005en_US
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2005, v. 81 n. 1, p. 159-161en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://hdl.handle.net/10722/155263-
dc.description.abstractThe interface quality and reliability of gate oxides grown on n-/p-type 6H-SiC in diluted NO gas at 1150°C are investigated. As compared to conventional 100%-NO oxidation, the diluted-NO (50% and 23%) oxidations lead to lower interface-state, border-trap and oxide-charge densities. This is attributed to the fact that carbon-accumulation and carbon-removal rates are closer when oxidation is performed in diluted NO, giving a smoother, less disordered and strained interface. Moreover, less degradation of the diluted-NO samples than 100%-NO samples is observed during high-field stressing (±7MV/cm), indicating that stronger SiN bonds are created near/at the SiC/SiO2 interface for oxide grown in diluted NO ambient. © Springer-Verlag 2005.en_US
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_US
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_US
dc.titleImproved interfacial properties of SiO2 grown on 6H-SiC in diluted NOen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/s00339-004-2940-3en_US
dc.identifier.scopuseid_2-s2.0-18244371666en_US
dc.identifier.hkuros103236-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-18244371666&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume81en_US
dc.identifier.issue1en_US
dc.identifier.spage159en_US
dc.identifier.epage161en_US
dc.identifier.isiWOS:000228794000027-
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridXu, JP=22952417000en_US
dc.identifier.scopusauthoridLi, CX=22034888200en_US
dc.identifier.scopusauthoridChan, CL=8507083700en_US

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